Novel compound and method for producing same

ABSTRACT

A compound represented by the following formula (1): 
     
       
         
         
             
             
         
       
         
         
           
             wherein R 1  is a 2n-valent group having 1 to 60 carbon atoms; R 2  to R 5  are each independently a linear, branched, or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a group in which a hydrogen atom of a hydroxy group is replaced with a vinylphenylmethyl group, a group selected from the group consisting of groups represented by the following formula (A), a thiol group, or a hydroxy group, wherein at least one of the R 2  to the R 5  is a group selected from a group represented by the formula (A); m 2  and m 3  are each independently an integer of 0 to 8; m 4  and m 5  are each independently an integer of 0 to 9, provided that m 2 , m 3 , m 4 , and m 5  are not 0 at the same time; n is an integer of 1 to 4; and p 2  to p 5  are each independently an integer of 0 to 2:

TECHNICAL FIELD

The present invention relates to a novel compound and a method forproducing the same.

BACKGROUND ART

For photoresist components, resin raw materials intended for materialsfor electric or electronic components or structural materials, or resincuring agents, allyl compounds and (meth)acryloyl compounds having abisphenol skeleton are known to be useful from the viewpoint of variousproperties (such as optical properties, heat resistance, waterresistance, moisture resistance, chemical resistance, electricalproperties, mechanical properties, and dimensional stability) (seePatent Literatures 1 to 11).

Various materials have also been proposed for optical component formingcompositions. For example, acrylic resins (see Patent Literatures 12 and13) and polyphenol having a specific structure derived from an allylgroup (see Patent Literature 14) have been proposed.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Laid-Open No. 2004-137200

Patent Literature 2: Japanese Patent Laid-Open No. 2009-51780

Patent Literature 3: Japanese Patent Laid-Open No. 2012-131749

Patent Literature 4: Japanese Patent Laid-Open No. 2012-068652

Patent Literature 5: Japanese Patent Laid-Open No. 2012-093784

Patent Literature 6: Japanese Patent Laid-Open No. 2012-118551

Patent Literature 7: Japanese Patent Laid-Open No. 2002-284740

Patent Literature 8: Japanese Patent Laid-Open No. 1999-043524

Patent Literature 9: Japanese Patent Laid-Open No. 1997-263560

Patent Literature 10: International Publication No. WO 2006/132139

Patent Literature 11: International Publication No. WO 2013/073582

Patent Literature 12: Japanese Patent Laid-Open No. 2010-138393

Patent Literature 13: Japanese Patent Laid-Open No. 2015-174877

Patent Literature 14: International Publication No. WO 2014/123005

SUMMARY OF INVENTION Technical Problem

In recent years, a further improvement of the above properties has beenrequired. Thus, there is a demand for further developing novel allylcompounds and novel (meth)acryloyl compounds.

The present invention has been made in light of the above problems. Anobject of the present invention is to provide a novel compound excellentin heat resistance and a method for producing the same.

Solution to Problem

The inventor has, as a result of devoted examinations to solve the aboveproblems, found out that a novel allyl compound and a novel(meth)acryloyl compound having a specific structure can solve the aboveproblems, and reached the present invention.

More specifically, the present invention is as follows.

[1]

A compound represented by the following formula (1):

wherein R¹ is a 2n-valent group having 1 to 60 carbon atoms; R² to R⁵are each independently a linear, branched, or cyclic alkyl group having1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, analkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to30 carbon atoms and optionally having a substituent, a halogen atom, anitro group, an amino group, a carboxylic acid group, a group in which ahydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a group selected from the group consisting of groups representedby the following formula (A), a thiol group, or a hydroxy group, whereinat least one of the R² to the R⁵ is a group selected from a grouprepresented by the formula (A); m² and m³ are each independently aninteger of 0 to 8; m⁴ and m⁵ are each independently an integer of 0 to9, provided that m², m³, m⁴, and m⁵ are not 0 at the same time; n is aninteger of 1 to 4; and p² to p⁵ are each independently an integer of 0to 2:

[2]

The compound according to [1], wherein R¹ is a 2n-valent group having 1to 30 carbon atoms, R² to R⁵ are each independently a linear, branched,or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, agroup selected from a group represented by the above formula (A), athiol group, or a hydroxy group, wherein at least one of the R² to theR⁵ is a group selected from the group consisting of groups representedby the above formula (A), m² and m³ are each independently an integer of0 to 8, m⁴ and m⁵ are each independently an integer of 0 to 9, providedthat m², m³, m⁴, and m⁵ are not 0 at the same time, n is an integer of 1to 4, and p² to p⁵ are each independently an integer of 0 to 2, in theabove formula (1).

[3]

The compound according to [1] or [2], wherein at least one of the R⁴ andthe R⁵ is a group selected from the group consisting of groupsrepresented by the above formula (A).

[4]

The compound according to any one of [1] to [3], wherein at least one ofthe R² and the R³ is a group selected from the group consisting ofgroups represented by the above formula (A).

[5]

The compound according to any of [1] to [4], wherein the compoundrepresented by the above formula (1) is a compound represented by thefollowing formula (1a):

wherein R¹ to R⁵ and n are as same as the groups in the above formula(1); m^(2′) and m^(3′) are each independently an integer of 0 to 4; andm^(4′) and m^(5′) are each independently an integer of 0 to 5, providedthat m^(2′), m^(3′), m^(4′), and m^(5′) are not 0 at the same time.

[6]

The compound according to [5], wherein the compound represented by theabove formula (1a) is a compound represented by the following formula(1b):

wherein R¹ and n are as same as the groups in the above formula (1); R⁶and R⁷ are each independently a linear, branched, or cyclic alkyl grouphaving 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms,an alkenyl group having 2 to 10 carbon atoms, a group selected from thegroup consisting of groups represented by the above formula (A), a thiolgroup, or a hydroxy group; R⁸ to R¹¹ are each independently a groupselected from the group consisting of groups represented by the aboveformula (A) or a hydroxy group, provided that at least one of the R⁸ tothe R¹¹ is a group selected from the group consisting of groupsrepresented by the above formula (A); and m⁶ and m⁷ are eachindependently an integer of 0 to 7.

[7]

The compound according to [6], wherein the compound represented by theabove formula (1b) is a compound selected from the group consisting ofcompounds represented by the following formula (1c):

wherein each R¹² is independently a group selected from the groupconsisting of groups represented by the above formula (A) or a hydroxygroup, provided that at least one R¹² is a group selected from the groupconsisting of groups represented by the above formula (A).

[8]

A resin comprising a constituent unit derived from the compoundaccording to any one of [1] to [7].

[9]

A method for producing the compound according to any one of [1] to [7],comprising a step of reacting a compound represented by the followingformula (2) with an allyl group introducing agent or a (meth)acryloylgroup introducing agent in the presence of a basic catalyst:

wherein R¹ is a 2n-valent group having 1 to 60 carbon atoms; R^(2′) toR^(5′) are each independently a linear, branched, or cyclic alkyl grouphaving 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms,an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1to 30 carbon atoms and optionally having a substituent, a halogen atom,a nitro group, an amino group, a carboxylic acid group, a group in whicha hydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a thiol group, or a hydroxy group, wherein at least one of theR^(2′) to the R^(5′) is a hydroxy group; m² and m³ are eachindependently an integer of 0 to 8; m⁴ and m⁵ are each independently aninteger of 0 to 9, provided that m², m³, m⁴, and m⁵ are not 0 at thesame time; n is an integer of 1 to 4; and p² to p⁵ are eachindependently an integer of 0 to 2.

[10]

A composition comprising:

one or more selected from the group consisting of the compound accordingto any one of [1] to [7]; and

the resin according to [8].

[11]

A composition for forming optical component comprising:

one or more selected from the group consisting of the compound accordingto any one of [1] to [7]; and

the resin according to [8].

[12]

A film forming composition for lithography comprising:

one or more selected from the group consisting of the compound accordingto any one of [1] to [7]; and

the resin according to [8].

[13]

A resist composition comprising:

one or more selected from the group consisting of the compound accordingto any one of [1] to [7]; and

the resin according to [8].

[14]

The resist composition according to [13], further comprising a solvent.

[15]

The resist composition according to [13] or [14], further comprising anacid generating agent.

[16]

The resist composition according to any one of [13] to [15], furthercomprising an acid diffusion controlling agent.

[17]

A method for forming a resist pattern, comprising:

a step of forming a resist film on a substrate using the resistcomposition according to any one of [13] to [16];

a step of exposing at least a portion of the formed resist film; and

a step of developing the exposed resist film, thereby forming a resistpattern.

[18]

A radiation-sensitive composition comprising:

a component (A) which is one or more selected from the group consistingof the compound according to any one of [1] to [7]; and

the resin according to [8];

an optically active diazonaphthoquinone compound (B); and

a solvent, wherein

the content of the solvent is 20 to 99% by mass based on 100% by mass intotal of the radiation-sensitive composition, and

the content of components except for the solvent is 1 to 80% by massbased on 100% by mass in total of the radiation-sensitive composition.

[19]

The radiation-sensitive composition according to [19], wherein thecontent ratio among the compound and/or the resin (A), the opticallyactive diazonaphthoquinone compound (B), and a further optionalcomponent (D) optionally contained in the radiation-sensitivecomposition ((A)/(B)/(D)) is (1 to 99% by mass)/(99 to 1% by mass)/(0 to98% by mass), based on 100% by mass of solid components of theradiation-sensitive composition.

[20]

The radiation-sensitive composition according to [19] or [20], whereinthe radiation-sensitive composition is capable of forming an amorphousfilm by a spin coating.

[21]

A method for producing an amorphous film, comprising a step of formingan amorphous film on a substrate using the radiation-sensitivecomposition according to any one of [18] to [20].

[22]

A method for forming a resist pattern, comprising:

a step of forming a resist film on a substrate using theradiation-sensitive composition according to any one of [18] to [20];

a step of exposing at least a portion of the formed resist film; and

a step of developing the exposed resist film, thereby forming a resistpattern.

[23]

A composition for underlayer film formation for lithography comprising

one or more selected from the group consisting of the compound accordingto any one of [1] to [7] and the resin according to [8], and

a solvent.

[24]

The composition for underlayer film formation for lithography accordingto [24], further comprising a crosslinking agent.

[25]

A method for producing an underlayer film for lithography, comprising astep of forming an underlayer film on a substrate using the compositionfor underlayer film formation for lithography according to [23] or [24].

[26]

A method for forming a resist pattern, comprising:

a step of forming an underlayer film on a substrate using thecomposition for underlayer film formation for lithography according to[23] or [24];

a step of forming at least one photoresist layer on the underlayer film;and

a step of irradiating a predetermined region of the photoresist layerwith radiation for development, thereby forming a resist pattern.

[27]

A method for forming a circuit pattern, comprising:

a step of forming an underlayer film on a substrate using thecomposition for underlayer film formation for lithography according to[23] or [24];

a step of forming an intermediate layer film on the underlayer filmusing a resist intermediate layer film material containing a siliconatom;

a step of forming at least one photoresist layer on the intermediatelayer film;

a step of irradiating a predetermined region of the photoresist layerwith radiation for development, thereby forming a resist pattern;

a step of etching the intermediate layer film with the resist pattern asa mask, thereby forming an intermediate layer film pattern;

a step of etching the underlayer film with the intermediate layer filmpattern as an etching mask, thereby forming an underlayer film pattern;and

a step of etching the substrate with the underlayer film pattern as anetching mask, thereby forming a pattern on the substrate.

[28]

A purification method comprising:

a step of obtaining a solution (S) by dissolving one or more selectedfrom the group consisting of the compound according to any one of [1] to[7] and the resin according to [8] in a solvent; and

a step of extracting impurities in the compound and/or the resin bybringing the obtained solution (S) into contact with an acidic aqueoussolution (a first extraction step), wherein

the solvent used in the step of obtaining the solution (S) comprises asolvent that does not mix with water.

[29]

The purification method according to [28], wherein

the acidic aqueous solution is an aqueous mineral acid solution or anaqueous organic acid solution;

the aqueous mineral acid solution is an aqueous mineral acid solution inwhich one or more selected from the group consisting of hydrochloricacid, sulfuric acid, nitric acid, and phosphoric acid is dissolved inwater; and

the aqueous organic acid solution is an aqueous organic acid solution inwhich one or more selected from the group consisting of acetic acid,propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid,maleic acid, tartaric acid, citric acid, methanesulfonic acid,phenolsulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acid isdissolved in water.

[30]

The purification method according to [28] or [29], wherein the solventthat does not mix with water is one or more solvents selected from thegroup consisting of toluene, 2-heptanone, cyclohexanone, cyclopentanone,methyl isobutyl ketone, propylene glycol monomethyl ether acetate, andethyl acetate.

[31]

The purification method according to any one of [29] to [30], comprisingthe step of extracting impurities in the compound and/or the resin byfurther bringing a solution phase comprising the compound and/or theresin into contact with water after the first extraction step (a secondextraction step).

Advantageous Effects of Invention

The present invention can provide a novel compound excellent in heatresistance and a method for producing the same.

DESCRIPTION OF EMBODIMENTS

Hereinafter, an embodiment of the present invention (hereinafter,referred to as “present embodiment”) will be described in detail.However, the present invention is not limited to only the presentembodiment, and various changes or modifications can be made withoutdeparting from the spirit of the present invention. In the presentspecification, the “(meth)acryloyl compound” is a general term for anacryloyl compound and a methacryloyl compound. Herein, the “acryloylcompound” means a compound containing an acryloyl group (H₂C═CH—C(═O)—).The “methacryloyl compound” means a compound containing a methacryloylgroup (H₂C═C(CH₃)—C(═O)—). Also, the “allyl compound” means a compoundcontaining an allyl group (CH₂═CHCH₂—).

[Compound]

The compound of the present embodiment is represented by the formula (1)given below. The compound is a novel allyl compound or a novel(meth)acryloyl compound having at least one group selected from a grouprepresented by the formula (A), i.e., at least one group selected fromthe group consisting of an oxygen atom-mediated acryloyl group, anoxygen atom-mediated methacryloyl group, and an oxygen atom-mediatedallyl group. The compound of the present embodiment has a polycyclicaromatic structure and is therefore excellent in heat resistance.Therefore, the compound of the present embodiment can be suitably usedin photoresist components, resin raw materials for materials forelectric or electronic components, raw materials for curable resins suchas photocurable resins, resin raw materials for structural materials, orresin curing agents.

wherein R¹ is a 2n-valent group having 1 to 60 carbon atoms; R² to R⁵are each independently a linear, branched, or cyclic alkyl group having1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, analkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to30 carbon atoms and optionally having a substituent, a halogen atom, anitro group, an amino group, a carboxylic acid group, a group in which ahydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a group selected from the group consisting of groups representedby the following formula (A), a thiol group, or a hydroxy group, whereinat least one of the R² to the R⁵ is a group selected from a grouprepresented by the formula (A); m² and m³ are each independently aninteger of 0 to 8; m⁴ and m⁵ are each independently an integer of 0 to9, provided that m², m³, m⁴, and m⁵ are not 0 at the same time; n is aninteger of 1 to 4; and p² to p⁵ are each independently an integer of 0to 2:

R¹ in the above formula (1) is a 2n-valent group having 1 to 60 carbonatoms, and each aromatic ring is bonded via this R¹. The above 2n-valentgroup refers to an alkylene group having 1 to 60 carbon atoms when n is1, an alkanetetrayl group having 1 to 60 carbon atoms when n is 2, analkanehexayl group having 2 to 60 carbon atoms when n is 3, and analkaneoctayl group having 3 to 60 carbon atoms when n is 4.

Examples of the above 2n-valent group include linear hydrocarbon groups,branched hydrocarbon groups, and alicyclic hydrocarbon groups. Herein,the alicyclic hydrocarbon group also includes bridged alicyclichydrocarbon groups. Also, the above 2n-valent group may have a doublebond, a heteroatom, or an aromatic group having 6 to 60 carbon atoms.

Examples of the above divalent group having 1 to 60 carbon atoms(alkylene group) include, but not particularly limited to, a methylenegroup, an ethylene group, a propylene group, a butylene group, apentylene group, a hexylene group, a heptylene group, an octylene group,a nonylene group, a decylene group, an octadecylene group, acyclopropylene group, a cyclohexylene group, an adamantylene group, aphenylene group, a tosylene group, a dimethylphenylene group, anethylphenylene group, a propylphenylene group, a butylphenylene group, acyclohexylphenylene group, a biphenylene group, a terphenylene group, anaphthylene group, an anthracylene group, a phenanthrylene group, apyrenylene group, a cyclopropylmethylene group, a cyclohexylmethylenegroup, an adamantylmethylene group, a phenylmethylene group, atosylmethylene group, a dimethylphenylmethylene group, anethylphenylmethylene group, a propylphenylmethylene group, abutylphenylmethylene group, a cyclohexylphenylmethylene group, abiphenylmethylene group, a terphenylmethylene group, a naphthylmethylenegroup, an anthracylmethylene group, a phenanthrylmethylene group, and apyrenylmethylene group.

Examples of the above tetravalent group having 1 to 60 carbon atoms(alkanetetrayl group) include, but not particularly limited to, amethanetetrayl group, an ethanetetrayl group, a propanetetrayl group, abutanetetrayl group, a pentanetetrayl group, a hexanetetrayl group, aheptanetetrayl group, an octanetetrayl group, a nonanetetrayl group, adecanetetrayl group, an octadecanetetrayl group, a cyclopropanetetraylgroup, a cyclohexanetetrayl group, an adamantanetetrayl group, abenzenetetrayl group, a toluenetetrayl group, a dimethylbenzenetetraylgroup, an ethanetetrayl group, a propylbenzenetetrayl group, abutylbenzenetetrayl group, a cyclohexylbenzenetetrayl group, abiphenyltetrayl group, a terphenyltetrayl group, a naphthalenetetraylgroup, an anthracenetetrayl group, a phenanthrenetetrayl group, apyrenetetrayl group, a cyclopropanedimethylene group, acyclohexanedimethylene group, an adamantanedimethylene group, abenzenedimethylene group, a toluenedimethylene group, adimethylbenzenedimethylene group, an ethylbenzenedimethylene group, apropylbenzenedimethylene group, a butylbenzenedimethylene group, acyclohexylbenzenedimethylene group, a biphenyldimethylene group, aterphenyldimethylene group, a naphthalenedimethylene group, ananthracenedimethylene group, a phenanthrenedimethylene group, and apyrenedimethylene group.

Examples of the above hexavalent group having 2 to 60 carbon atoms(alkanehexayl group) include, but not particularly limited to, anethanehexayl group, a propanehexayl group, a butanehexayl group, apentanehexayl group, a hexanehexayl group, a heptanehexayl group, anoctanehexayl group, a nonanehexayl group, a decanehexayl group, anoctadecanehexayl group, a cyclopropanehexayl group, a cyclohexanehexaylgroup, an adamantanehexayl group, a benzenehexayl group, a toluenehexaylgroup, a dimethylbenzenehexayl group, an ethanehexayl group, apropylbenzenehexayl group, a butylbenzenehexayl group, acyclohexylbenzenehexayl group, a biphenylhexayl group, a terphenylhexaylgroup, a naphthalenehexayl group, an anthracenehexayl group, aphenanthrenehexayl group, a pyrenehexayl group, acyclopropanetrimethylene group, a cyclohexanetrimethylene group, anadamantanetrimethylene group, a benzenetrimethylene group, atoluenetrimethylene group, a dimethylbenzenetrimethylene group, aethylbenzenetrimethylene group, a propylbenzenetrimethylene group, abutylbenzenetrimethylene group, a biphenyltrimethylene group, aterphenyltrimethylene group, a naphthalenetrimethylene group, ananthracenetrimethylene group, a phenanthrenetrimethylene group, and apyrenetrimethylene group.

Examples of the above octavalent group having 3 to 60 carbon atoms(alkaneoctayl group) include, but not particularly limited to, apropaneoctayl group, a butaneoctayl group, a pentaneoctayl group, ahexaneoctayl group, a heptaneoctayl group, an octaneoctayl group, anonaneoctayl group, a decaneoctayl group, an octadecaneoctayl group, acyclopropaneoctayl group, a cyclohexaneoctayl group, an adamantaneoctaylgroup, a tolueneoctayl group, a dimethylbenzeneoctayl group, anethanoate group, a propylbenzeneoctayl group, a butylbenzeneoctaylgroup, a cyclohexylbenzeneoctayl group, a biphenyloctayl group, aterphenyloctayl group, a naphthaleneoctayl group, an anthraceneoctaylgroup, a phenanthreneoctayl group, a pyreneoctayl group, acyclopropanetetramethylene group, a cyclohexanetetramethylene group, anadamantanetetramethylene group, a benzenetetramethylene group, atoluenetetramethylene group, a dimethylbenzenetetramethylene group, anethylbenzenetetramethylene group, a propylbenzenetetramethylene group, abutylbenzenetetramethylene group, a biphenyltetramethylene group, aterphenyltetramethylene group, a naphthalenetetramethylene group, ananthracenetetramethylene group, a phenanthrenetetramethylene group, anda pyrenetetramethylene group.

Among them, a phenylene group, a tosylene group, a dimethylphenylenegroup, an ethylphenylene group, a propylphenylene group, abutylphenylene group, a cyclohexylphenylene group, a biphenylene group,a terphenylene group, a naphthylene group, an anthracylene group, aphenanthrylene group, a pyrenylene group, a phenylmethylene group, atosylmethylene group, a dimethylphenylmethylene group, anethylphenylmethylene group, a propylphenylmethylene group, abutylphenylmethylene group, a cyclohexylphenylmethylene group, abiphenylmethylene group, a terphenylmethylene group, a naphthylmethylenegroup, an anthracylmethylene group, a phenanthrylmethylene group, or apyrenylmethylene group is preferable from the viewpoint of heatresistance. Among them, a phenylmethylene group, a tosylmethylene group,a dimethylphenylmethylene group, an ethylphenylmethylene group, apropylphenylmethylene group, a butylphenylmethylene group, acyclohexylphenylmethylene group, a biphenylmethylene group, aterphenylmethylene group, a naphthylmethylene group, ananthracylmethylene group, a phenanthrylmethylene group, or apyrenylmethylene group is particularly preferable from the viewpoint ofthe availability of raw materials.

R² to R⁵ are each independently a monovalent group selected from thegroup consisting of a linear, branched, or cyclic alkyl group having 1to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, analkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to30 carbon atoms and optionally having a substituent, a halogen atom, anitro group, an amino group, a carboxylic acid group, a group in which ahydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a group selected from the group consisting of groups representedby the above formula (A), a thiol group, and a hydroxy group. Herein, atleast one of R² to R⁵ is a group selected from the group consisting ofgroups represented by the above formula (A). The “at least one of R² toR⁵” means that at least one group among each independently representedR² to R⁵ is a group selected from a group represented by the formula(A), and does not mean that at least one kind of R² to R⁵ is a groupselected from a group represented by the formula (A). In other words,for example, when m² is 2, the case where one of the two R² moieties isa group selected from a group represented by the formula (A), and theother is a methyl group satisfies the requirement “at least one of R² toR⁵”. It is not required that all of the R² moieties should be groupsselected from a group represented by the formula (A). The same holdstrue for the description below.

The number of the group selected from a group represented by the formula(A) in a molecule is preferably 1 to 10, more preferably 2 to 8, andstill more preferably 2 to 6.

Examples of the above linear, branched, or cyclic alkyl group having 1to 30 carbon atoms include, but not particularly limited to, a methylgroup, an ethyl group, a n-propyl group, an isopropyl group, a n-butylgroup, an isobutyl group, a sec-butyl group, a t-butyl group, a n-pentylgroup, a neopentyl group, a n-hexyl group, a thexyl group, a n-heptylgroup, a n-octyl group, a n-ethylhexyl group, a n-nonyl group, a n-decylgroup, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, acyclohexyl group, a cyclooctyl group, and a cyclodecyl group.

Examples of the aryl group having 6 to 30 carbon atoms include, but notparticularly limited to, a phenyl group, a methylphenyl group, adimethylphenyl group, and an ethylphenyl group.

Examples of the alkenyl group having 2 to 30 carbon atoms include, butnot particularly limited to, a vinyl group, a propynyl group, a butynylgroup, a pentynyl group, a hexynyl group, an octynyl group, and adecynyl group.

m² and m³ are each independently an integer of 0 to 8, preferably 1 to 4and more preferably 1 to 2. m⁴ and m⁵ are each independently an integerof 0 to 9, preferably 1 to 4 and more preferably 1 to 2. However, m²,m³, m⁴, and m⁵ are not 0 at the same time.

n is an integer of 1 to 4 and preferably 1 to 2.

p² to p⁵ are each independently an integer of 0 to 2 and preferably 0 to1.

In the above formula (1), preferably, R¹ is a 2n-valent group having 1to 30 carbon atoms, R² to R⁵ are each independently a linear, branched,or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, agroup selected from the group consisting of groups represented by theabove formula (A), a thiol group, or a hydroxy group, wherein at leastone of the R² to the R⁵ is a group selected from the group consisting ofgroups represented by the above formula (A), m² and m³ are eachindependently an integer of 0 to 8, m⁴ and m⁵ are each independently aninteger of 0 to 9, provided that m², m³, m⁴, and m⁵ are not 0 at thesame time, n is an integer of 1 to 4, and p² to p⁵ are eachindependently an integer of 0 to 2.

The compound represented by the above formula (1) has high heatresistance attributed to its rigid structure, in spite of its relativelylow molecular weight, and can therefore be used even under hightemperature baking conditions. Furthermore, the compound represented bythe above formula (1) has a relatively low molecular weight and a lowviscosity and therefore facilitates uniformly and completely fillingeven the steps of an uneven substrate (particularly having fine space,hole pattern, etc.). As a result, the embedding properties of underlayerfilm forming materials for lithography containing this compound can berelatively advantageously enhanced. Moreover, the compound has arelatively high carbon concentration and is therefore also provided withhigh etching resistance. In addition, the compound has a group selectedfrom the group consisting of groups represented by the above formula (A)Therefore, not only can the compound be easily cured and used even underlow temperature baking conditions, but its quality is stabilized. Highheat resistance can also be conferred as a curable resin component suchas a raw material for a base material of a photocurable resin.

In the compound represented by the above formula (1), at least one of R⁴and R⁵ is preferably a group selected from the group consisting ofgroups represented by the above formula (A) from the viewpoint ofsolubility. The “at least one of R⁴ and R⁵” means that at least one ofeach independently represented R⁴ and R⁵ is a group selected from agroup represented by the formula (A), and does not mean that at leastone kind of R⁴ and R⁵ is a group selected from a group represented bythe formula (A).

In the compound represented by the above formula (1), at least one of R²and R³ is preferably a group selected from the group consisting ofgroups represented by the above formula (A) from the viewpoint of easycrosslinking. The “at least one of R² and R³” means that at least one ofeach independently represented R² and R³ is a group selected from agroup represented by the formula (A), and does not mean that at leastone kind of R² and R³ is a group selected from a group represented bythe formula (A).

The compound represented by the above formula (1) is more preferably acompound represented by the following formula (1a) from the viewpoint ofthe supply of raw materials.

wherein R¹ to R⁵ and n are as same as the groups in the above formula(1); m^(2′) and m^(3′) are each independently an integer of 0 to 4; andm^(4′) and m^(5′) are each independently an integer of 0 to 5, providedthat m^(2′), m^(3′) m^(4′), and m^(5′) are not 0 at the same time.

m^(2′) and m^(3′) are each independently an integer of 0 to 4 andpreferably 1 to 2. m^(4′) and m^(5′) are each independently an integerof 0 to 5 and preferably 1 to 2. However, m^(2′), m^(3′), m^(4′), andm^(5′) are not 0 at the same time.

The compound represented by the above formula (1a) is preferably acompound represented by the following formula (1b) from the viewpoint ofsolubility in an organic solvent.

above formula (1); R⁶ and R⁷ are each independently a linear, branched,or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, agroup selected from the group consisting of groups represented by theabove formula (A), a thiol group, or a hydroxy group; R⁸ to R¹¹ are eachindependently a group selected from the group consisting of groupsrepresented by the above formula (A) or a hydroxy group, provided thatat least one of R⁸ to R¹¹ is a group selected from the group consistingof groups represented by the above formula (A); and m⁶ and m⁷ are eachindependently an integer of 0 to 7.

Examples of the linear, branched, or cyclic alkyl group having 1 to 10carbon atoms, the aryl group having 6 to 10 carbon atoms, and thealkenyl group having 2 to 10 carbon atoms represented by R⁶ and R⁷ caninclude, but not particularly limited to, the same groups as describedin the above formula (1).

The compound represented by the above formula (1b) is particularlypreferably a compound selected from the group consisting of compoundsrepresented by the following formula (1c) from the viewpoint of furthersolubility in an organic solvent.

wherein each R¹² is independently a group selected from the groupconsisting of groups represented by the above formula (A) or a hydroxygroup, provided that at least one R¹² is a group selected from the groupconsisting of groups represented by the above formula (A).

Specific examples of the compound represented by the above formula (1)include those described below, though the compound of the presentembodiment is not limited thereto.

In the above compounds, R² to R⁵ are each independently a group as sameas the groups in the above formula (1); m⁸ and m⁹ are each independentlyan integer of 0 to 6; and m¹⁰ and m¹¹ are each independently an integerof 0 to 7, provided that m⁸, m⁹, m¹⁰, and m¹¹ are not 0 at the sametime.

In the above compounds, R² to R⁵ are each independently a group as sameas the groups in the above formula (1); m^(2′) and m^(3′) are eachindependently an integer of 0 to 4; and m^(4′) and m^(5′) are eachindependently an integer of 0 to 5, provided that m^(2′), m^(3′),m^(4′), and m^(5′) are not 0 at the same time.

In the above compounds, R² to R⁵ are each independently a group as sameas the groups in the above formula (1); m⁸ and m⁹ are each independentlyan integer of 0 6; and m¹⁰ and m¹¹ are each independently an integer of0 to 7, provided that m⁸, m⁹, m¹⁰, and m¹¹ are not 0 at the same time.

In the above compounds, R² to R⁵ are each independently a group as sameas the groups in the above formula (1); m^(2′) and m^(3′) are eachindependently an integer of 0 to 4; and m^(4′) and m^(5′) are eachindependently an integer of 0 to 5, provided that m^(2′), m^(3′),m^(4′), and m^(5′) are not 0 at the same time.

In the above compounds, each R¹² is independently a group as same as thegroups in the above formula (1c).

[Method for Producing Compound]

In the present embodiment, the compound represented by the formula (1)used in the present embodiment can be arbitrarily synthesized byapplying a publicly known approach, and the synthesis approach is notparticularly limited. A precursor compound (a compound of the aboveformula (1) wherein at least one of R² to R⁵ is a hydroxy group) of thecompound represented by the above formula (1) can be obtained, forexample, by subjecting a biphenol, a bithiophenol, a binaphthol, abithionaphthol, or a bianthraceneol, and a corresponding aldehyde orketone to polycondensation reaction in the presence of an acid catalystat normal pressure. If necessary, this reaction can also be carried outunder increased pressure.

Examples of the above biphenol include, but not particularly limited to,biphenol, methylbiphenol, and methoxybinaphthol. These biphenols may beused alone as one kind or may be used in combination of two or morekinds. Among them, biphenol is more preferably used from the viewpointof the stable supply of raw materials.

Examples of the above bithiophenol include, but not particularly limitedto, bithiophenol, methylbithiophenol, and methoxybithiophenol. Thesebithiophenols may be used alone as one kind or may be used incombination of two or more kinds. Among them, bithiophenol is morepreferably used from the viewpoint of the stable supply of rawmaterials.

Examples of the above binaphthol include, but not particularly limitedto, binaphthol, methylbinaphthol, and methoxybinaphthol. Thesebinaphthols may be used alone as one kind or may be used in combinationof two or more kinds. Among them, binaphthol is more preferably usedfrom the viewpoint of increasing a carbon atom concentration andimproving heat resistance.

Examples of the above bithionaphthol include, but not particularlylimited to, bithionaphthol, methylbithionaphthol, andmethoxybithionaphthol. These bithionaphthols may be used alone as onekind or may be used in combination of two or more kinds. Among them,bithionaphthol is more preferably used from the viewpoint of increasinga carbon atom concentration and improving heat resistance.

Examples of the above bianthraceneol include, but not limited to,bianthraceneol, methylbianthraceneol, and methoxybianthraceneol. Thesebianthraceneols may be used alone as one kind or may be used incombination of two or more kinds. Among them, bianthraceneol ispreferably used from the viewpoint of the stable supply of rawmaterials.

Examples of the above aldehyde include, but not particularly limited to,formaldehyde, trioxane, paraformaldehyde, acetaldehyde, propylaldehyde,butylaldehyde, hexylaldehyde, decylaldehyde, undecylaldehyde,phenylacetaldehyde, phenylpropylaldehyde, furfural, benzaldehyde,hydroxybenzaldehyde, fluorobenzaldehyde, chlorobenzaldehyde,nitrobenzaldehyde, methylbenzaldehyde, dimethylbenzaldehyde,ethylbenzaldehyde, propylbenzaldehyde, butylbenzaldehyde,cyclohexylbenzaldehyde, benzaldehyde, hydroxybenzaldehyde,fluorobenzaldehyde, chlorobenzaldehyde, nitrobenzaldehyde,methylbenzaldehyde, dimethylbenzaldehyde, ethylbenzaldehyde,propylbenzaldehyde, butylbenzaldehyde, cyclohexylbenzaldehyde,biphenylaldehyde, naphthaldehyde, anthracenecarboxyaldehyde,phenanthrenecarboxyaldehyde, pyrenecarboxyaldehyde, glyoxal,glutaraldehyde, phthalaldehyde, naphthalenedicarboxyaldehyde,biphenyldicarboxyaldehyde, anthracenedicarboxyaldehyde,bis(diformylphenyl)methane, bis(diformylphenyl)propane, andbenzenetricarboxyaldehyde. These aldehydes may be used alone as one kindor may be used in combination of two or more kinds. Among them,benzaldehyde, phenanthrenecarboxyaldehyde, pyrenecarboxyaldehyde,naphthalenedicarboxyaldehyde, or biphenyldicarboxyaldehyde,anthracenedicarboxyaldehyde is preferably used from the viewpoint ofproviding high heat resistance.

Examples of the above ketone include, but not particularly limited to,acetone, methyl ethyl ketone, cyclobutanone, cyclopentanone,cyclohexanone, norbornanone, tricyclohexanone, tricyclodecanone,adamantanone, fluorenone, benzofluorenone, acenaphthenequinone,acenaphthenone, and anthraquinone. These ketones may be used alone asone kind or may be used in combination of two or more kinds. Among them,cyclopentanone, cyclohexanone, norbornanone, tricyclohexanone,tricyclodecanone, adamantanone, fluorenone, benzofluorenone,acenaphthenequinone, acenaphthenone, or anthraquinone is preferably usedfrom the viewpoint of providing high heat resistance.

The acid catalyst used in the above reaction can be arbitrarily selectedand used from publicly known catalysts and is not particularly limited.Inorganic acids, organic acids, and solid acids are widely known as suchacid catalysts, and examples include, but not particularly limited to,inorganic acids such as hydrochloric acid, sulfuric acid, phosphoricacid, hydrobromic acid, and hydrofluoric acid; organic acids such asoxalic acid, malonic acid, succinic acid, adipic acid, sebacic acid,citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonicacid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid,trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonicacid, naphthalenesulfonic acid, and naphthalenedisulfonic acid; Lewisacids such as zinc chloride, aluminum chloride, iron chloride, and borontrifluoride; and solid acids such as tungstosilicic acid,tungstophosphoric acid, silicomolybdic acid, and phosphomolybdic acid.Among them, organic acids and solid acids are preferable from theviewpoint of production, and hydrochloric acid, sulfuric acid, orp-toluenesulfonic acid is preferably used from the viewpoint ofproduction such as easy availability and handleability. The acidcatalysts can be used alone as one kind, or can be used in combinationof two or more kinds.

Also, the amount of the acid catalyst used can be arbitrarily setaccording to, for example, the kind of the raw materials used and thecatalyst used and moreover the reaction conditions and is notparticularly limited, but is preferably 0.01 to 100 parts by mass basedon 100 parts by mass of the reaction raw materials.

Upon the above reaction, a solvent may be used. The solvent is notparticularly limited as long as the reaction of the aldehyde or theketone used with the biphenol, the bithiophenol, the binaphthol, thebithionaphthol, or the bianthracenediol proceeds, and can be arbitrarilyselected and used from those publicly known. Examples include water,methanol, ethanol, propanol, butanol, tetrahydrofuran, dioxane, ethyleneglycol dimethyl ether, ethylene glycol diethyl ether, butyl acetate, anda mixed solvent thereof. The solvent can be used alone, or incombination of two or more kinds.

Also, the amount of these solvents used can be arbitrarily set accordingto, for example, the kind of the raw materials used and the catalystused and moreover the reaction conditions and is not particularlylimited, but is preferably in the range of 0 to 2000 parts by mass basedon 100 parts by mass of the reaction raw materials. Moreover, thereaction temperature in the above reaction can be arbitrarily selectedaccording to the reactivity of the reaction raw materials and is notparticularly limited, but is usually within the range of 10 to 200° C.

In order to obtain the precursor compound of the compound represented bythe formula (1) of the present embodiment, a higher reaction temperatureis more preferable. Specifically, the range of 60 to 200° C. ispreferable. The reaction method can be arbitrarily selected and usedfrom publicly known approaches and is not particularly limited, andthere are a method of charging the biphenol, the bithiophenol, thebinaphthol, the bithionaphthol, or the bianthracenediol, the aldehyde orthe ketone, and the catalyst in one portion, and a method of droppingthe biphenol, the bithiophenol, the binaphthol, the bithionaphthol, orthe bianthracenediol, and the aldehyde or the ketone, in the presence ofthe catalyst. After the polycondensation reaction terminates, isolationof the obtained compound can be carried out according to a conventionalmethod, and is not particularly limited. For example, by adopting acommonly used approach in which the temperature of the reaction vesselis elevated to 130 to 230° C. in order to remove unreacted rawmaterials, catalyst, etc. present in the system, and volatile portionsare removed at about 1 to 50 mmHg, the target compound can be obtained.

As preferable reaction conditions, the reaction proceeds by using 1.0mol to an excess of the biphenol, the bithiophenol, the binaphthol, thebithionaphthol, or the bianthracenediol and 0.001 to 1 mol of the acidcatalyst based on 1 mol of the aldehyde or the ketone, and reacting themat 50 to 150° C. at normal pressure for about 20 minutes to 100 hours.

The target component can be isolated by a publicly known method afterthe reaction terminates. An exemplary method involves concentrating thereaction solution, precipitating the reaction product by the addition ofpure water, cooling the reaction solution to room temperature, thenseparating the precipitates by filtration, filtering and drying theobtained solid matter, then separating and purifying the solid matterfrom by-products by column chromatography, and distilling off thesolvent, followed by filtration and drying, and thus the precursorcompound of the compound represented by the above formula (1), which isthe target compound, can be obtained.

The target compound represented by the above formula (1) can be obtainedfrom the precursor compound thus obtained by, for example, replacing ahydrogen atom of a phenolic hydroxy group with an allyl group or a(meth)acryloyl group by a publicly known method.

The method for replacing a hydrogen atom of a phenolic hydroxy groupwith an allyl group or a (meth)acryloyl group is not particularlylimited, and the target compound can be obtained by, for example,dehydrohalogenation reaction of reacting the above precursor compoundwith an allyl halide or a halide of (meth)acrylic acid in the presenceof a basic catalyst.

Alternatively, the compound represented by the formula (1) used in thepresent embodiment can also be obtained by introducing an allyl group ora (meth)acryloyl group to the biphenol or the like, followed by reactionwith the aldehyde or the ketone, and the synthesis approach is notparticularly limited.

The production method of the present embodiment preferably has the stepof reacting a compound represented by the following formula (2) with anallyl group introducing agent or a (meth)acryloyl group introducingagent in the presence of a basic catalyst.

wherein R¹ is a 2n-valent group having 1 to 30 carbon atoms; R^(2′) toR^(5′) are each independently a linear, branched, or cyclic alkyl grouphaving 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms,an alkenyl group having 2 to 10 carbon atoms, a thiol group, or ahydroxy group, wherein at least one of R^(2′) to R^(5′) is a hydroxygroup; m² and m³ are each independently an integer of 0 to 8; m⁴ and m⁵are each independently an integer of 0 to 9, provided that m², m³, m⁴,and m⁵ are not 0 at the same time; n is an integer of 1 to 4; and p² top⁵ are each independently an integer of 0 to 2.

The allyl group introducing agent or the (meth)acryloyl groupintroducing agent used in the present embodiment is used withoutparticular limitations as long as the compound can replace a hydrogenatom of a hydroxy group in the compound represented by the above formula(2) with an allyl group or a (meth)acryloyl group represented by theformula (B) given below. Examples of such a compound include allylchloride, allyl bromide, allyl iodide, (meth)acryloyl acid chloride,(meth)acryloyl acid bromide, (meth)acryloyl acid iodide, and(meth)acryloyl acid. One type or two or more types can be used as theallyl group introducing agent or the (meth)acryloyl group introducingagent.

In the present embodiment, the group substituted with the allyl, acryl,or methacryl group reacts in the presence of a radical or an acid or analkali so that its solubility in an acid, an alkali, or an organicsolvent used in a coating solvent or a developing solution is changed.For achieving pattern formation with higher sensitivity and higherresolution, it is preferable that the group substituted with the allyl,acryl, or methacryl group should have the properties of causing chainreaction in the presence of a radical or an acid or an alkali.

In the present embodiment, the basic catalyst used in the reaction ofthe compound represented by the formula (2) with the allyl groupintroducing agent or the (meth)acryloyl group introducing agent can bearbitrarily selected from well-known basic catalysts, and examplesthereof include: inorganic bases such as metal hydroxides (e.g., alkalimetal or alkaline earth metal hydroxides such as sodium hydroxide andpotassium hydroxide), metal carbonates (e.g., alkali metal or alkalineearth metal carbonates such as sodium carbonate and potassiumcarbonate), and alkali metal or alkaline earth metal bicarbonates suchas sodium bicarbonate and potassium bicarbonate; and organic bases suchas amines (e.g., tertiary amines (trialkylamines such as triethylamine,aromatic tertiary amines such as N,N-dimethylaniline, and heterocyclictertiary amines such as 1-methylimidazole), and carboxylic acid metalsalts (e.g., acetic acid alkali metal or alkaline earth metal salts suchas sodium acetate and calcium acetate). Sodium carbonate or potassiumcarbonate is preferable from the viewpoint of production such as easyavailability and handleability. One type or two or more types can beused as the basic catalyst.

Next, conditions for the reaction of the compound represented by theformula (2) with the allyl group introducing agent or the (meth)acryloylgroup introducing agent will be described in detail.

The reaction proceeds by using 1 mol to an excess of the allyl groupintroducing agent or the (meth)acryloyl group introducing agent and0.001 to 1 mol of the basic catalyst based on 1 mol of the compoundrepresented by the formula (2), and reacting them at 20 to 150° C. atnormal pressure for about 20 minutes to 100 hours. The target componentcan be isolated by a publicly known method after the reaction. Examplesthereof include a method which involves cooling the reaction solution inice water or the like to precipitate crystals, which are then isolatedto obtain crude crystals.

Subsequently, the crude crystals are dissolved in an organic solvent. Tothe solution, a strong base is added, and the mixture is reacted at 20to 150° C. at normal pressure for about 20 minutes to 100 hours. Thetarget component can be isolated by a publicly known method after thereaction. Examples thereof include a method which involves concentratingthe reaction solution, precipitating the reaction product by theaddition of pure water, cooling the reaction solution to roomtemperature, then separating the precipitates by filtration, filteringand drying the obtained solid matter, then separating and purifying thesolid matter from by-products by column chromatography, and distillingoff the solvent, followed by filtration and drying to obtain the targetcompound represented by the formula (1).

[Resin Having Constituent Unit Derived from Compound Represented byFormula (1)]

The resin of the present embodiment is a resin having a constituent unitderived from the compound represented by the above formula (1)(hereinafter, also referred to as “compound of the present embodiment”).The compound represented by the above formula (1) can be used directlyas a film forming composition for lithography or the like. The compoundrepresented by the above formula (1) can also be used in the resinhaving a constituent unit derived from the compound represented by theabove formula (1). The resin having a constituent unit derived from thecompound represented by the formula (1) includes a resin having aconstituent unit derived from the compound represented by the formula(1a), and a resin having a constituent unit derived from the compoundrepresented by the formula (1b). Hereinafter, the “compound representedby the formula (1)” can be used interchangeably with the “compoundrepresented by the formula (1a)”, or the “compound represented by theformula (1b)”.

The resin of the present embodiment is obtained by, for example,reacting the compound represented by the above formula (1) with acrosslinking compound.

As the crosslinking compound, a publicly known monomer can be usedwithout particular limitations as long as it can oligomerize orpolymerize the compound represented by the above formula (1). Specificexamples thereof include, but not particularly limited to, aldehydes,ketones, carboxylic acids, carboxylic acid halides, halogen-containingcompounds, amino compounds, imino compounds, isocyanates, andunsaturated hydrocarbon group-containing compounds.

Specific examples of the resin of the present embodiment include resinsthat are made novolac by, for example, a condensation reaction betweenthe compound represented by the above formula (1) with an aldehyde thatis a crosslinking compound.

Herein, examples of the aldehyde used when making the compoundrepresented by the above formula (1) novolac include, but notparticularly limited to, formaldehyde, trioxane, paraformaldehyde,benzaldehyde, acetaldehyde, propylaldehyde, phenylacetaldehyde,phenylpropylaldehyde, hydroxybenzaldehyde, chlorobenzaldehyde,nitrobenzaldehyde, methylbenzaldehyde, ethylbenzaldehyde,butylbenzaldehyde, biphenylaldehyde, naphthaldehyde,anthracenecarboaldehyde, phenanthrenecarboaldehyde, pyrenecarboaldehyde,and furfural. Among these, formaldehyde is more preferable. Thesealdehydes can be used alone as one kind or may be used in combination oftwo or more kinds. The amount of the above aldehydes used is notparticularly limited, but is preferably 0.2 to 5 mol and more preferably0.5 to 2 mol based on 1 mol of the compound represented by the aboveformula (1).

An acid catalyst can also be used in the condensation reaction betweenthe compound represented by the above formula (1) and the aldehyde. Theacid catalyst used herein can be arbitrarily selected and used frompublicly known catalysts and is not particularly limited. Inorganicacids, organic acids, Lewis acids, and solid acids are widely known assuch acid catalysts, and examples include, but not particularly limitedto, inorganic acids such as hydrochloric acid, sulfuric acid, phosphoricacid, hydrobromic acid, and hydrofluoric acid; organic acids such asoxalic acid, malonic acid, succinic acid, adipic acid, sebacic acid,citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonicacid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid,trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonicacid, naphthalenesulfonic acid, and naphthalenedisulfonic acid; Lewisacids such as zinc chloride, aluminum chloride, iron chloride, and borontrifluoride; and solid acids such as tungstosilicic acid,tungstophosphoric acid, silicomolybdic acid, and phosphomolybdic acid.Among them, organic acids and solid acids are preferable from theviewpoint of production, and hydrochloric acid or sulfuric acid ispreferable from the viewpoint of production such as easy availabilityand handleability. The acid catalysts can be used alone as one kind, orcan be used in combination of two or more kinds.

Also, the amount of the acid catalyst used can be arbitrarily setaccording to, for example, the kind of the raw materials used and thecatalyst used and moreover the reaction conditions and is notparticularly limited, but is preferably 0.01 to 100 parts by mass basedon 100 parts by mass of the reaction raw materials.

The aldehyde is not necessarily needed in the case of a copolymerizationreaction using a compound having a non-conjugated double bond, such asindene, hydroxyindene, benzofuran, hydroxyanthracene, acenaphthylene,biphenyl, bisphenol, trisphenol, dicyclopentadiene, tetrahydroindene,4-vinylcyclohexene, norbornadiene, 5-vinylnorborn-2-ene, α-pinene,β-pinene, and limonene, as the crosslinking compound.

A reaction solvent can also be used in the condensation reaction betweenthe compound represented by the above formula (1) and the aldehyde. Thereaction solvent in the polycondensation can be arbitrarily selected andused from publicly known solvents and is not particularly limited, andexamples include water, methanol, ethanol, propanol, butanol,tetrahydrofuran, dioxane, or a mixed solvent thereof. The reactionsolvents can be used alone as one kind, or can be used in combination oftwo or more kinds.

Also, the amount of these reaction solvents used can be arbitrarily setaccording to, for example, the kind of the raw materials used and thecatalyst used and moreover the reaction conditions and is notparticularly limited, but is preferably in the range of 0 to 2000 partsby mass based on 100 parts by mass of the reaction raw materials.Furthermore, the reaction temperature can be arbitrarily selectedaccording to the reactivity of the reaction raw materials and is notparticularly limited, but is usually within the range of 10 to 200° C.The reaction method can be arbitrarily selected and used from publiclyknown approaches and is not particularly limited, and there are a methodof charging the compound represented by the above formula (1), thealdehyde, and the catalyst in one portion, and a method of dropping thecompound represented by the above formula (1) and the aldehyde in thepresence of the catalyst.

After the polycondensation reaction terminates, isolation of theobtained resin can be carried out according to a conventional method,and is not particularly limited. For example, by adopting a commonlyused approach in which the temperature of the reaction vessel iselevated to 130 to 230° C. in order to remove unreacted raw materials,catalyst, etc. present in the system, and volatile portions are removedat about 1 to 50 mmHg, a novolac resin that is the target compound canbe obtained.

Herein, the resin according to the present embodiment may be ahomopolymer of a compound represented by the above formula (1), or maybe a copolymer with a further phenol. Herein, examples of thecopolymerizable phenol include, but not particularly limited to, phenol,cresol, dimethylphenol, trimethylphenol, butylphenol, phenylphenol,diphenylphenol, naphthylphenol, resorcinol, methylresorcinol, catechol,butylcatechol, methoxyphenol, methoxyphenol, propylphenol, pyrogallol,and thymol.

The resin according to the present embodiment may be a copolymer with apolymerizable monomer other than the above-described further phenols.Examples of such a copolymerization monomer include, but notparticularly limited to, naphthol, methylnaphthol, methoxynaphthol,dihydroxynaphthalene, indene, hydroxyindene, benzofuran,hydroxyanthracene, acenaphthylene, biphenyl, bisphenol, trisphenol,dicyclopentadiene, tetrahydroindene, 4-vinylcyclohexene, norbornadiene,vinylnorbornene, pinene, and limonene. The resin according to thepresent embodiment may be a copolymer of two or more components (forexample, a binary to quaternary system) composed of the compoundrepresented by the above formula (1) and the above-described phenol, maybe a copolymer of two or more components (for example, a binary toquaternary system) composed of the compound represented by the aboveformula (1) and the above-described copolymerization monomer, or may bea copolymer of three or more components (for example, a tertiary toquaternary system) composed of the compound represented by the aboveformula (1), the above-described phenol, and the above-describedcopolymerization monomer.

The molecular weight of the resin according to the present embodiment isnot particularly limited, and the weight average molecular weight (Mw)in terms of polystyrene is preferably 500 to 30,000 and more preferably750 to 20,000. The resin according to the present embodiment preferablyhas dispersibility (weight average molecular weight Mw/number averagemolecular weight Mn) within the range of 1.2 to 7 from the viewpoint ofenhancing crosslinking efficiency while suppressing volatile componentsduring baking. The above Mn can be determined by a method described inExamples mentioned later.

[Composition]

The composition of the present embodiment contains one or more selectedfrom the group consisting of the compound represented by the aboveformula (1) and the resin having a constituent unit derived from thecompound. Also, the composition of the present embodiment may containboth of the compound of the present embodiment and the resin of thepresent embodiment. Hereinafter, the “one or more selected from thegroup consisting of the compound represented by the above formula (1)and the resin having a constituent unit derived from the compound” isalso referred to as “compound and/or resin of the present embodiment” or“component (A)”.

[Composition for Forming Optical Component]

The composition for forming optical component of the present embodimentcontains one or more selected from the group consisting of the compoundrepresented by the above formula (1) and the resin having a constituentunit derived from the compound. Also, the composition for formingoptical component of the present embodiment may contain both of thecompound of the present embodiment and the resin of the presentembodiment. Herein, the “optical component” refers to a component in theform of a film or a sheet as well as a plastic lens (a prism lens, alenticular lens, a microlens, a Fresnel lens, a viewing angle controllens, a contrast improving lens, etc.), a phase difference film, a filmfor electromagnetic wave shielding, a prism, an optical fiber, a solderresist for flexible printed wiring, a plating resist, an interlayerinsulating film for multilayer printed circuit boards, or aphotosensitive optical waveguide. The compound and the resin of thepresent invention are useful for forming these optical components.

[Film Forming Composition for Lithography]

The film forming composition for lithography of the present embodimentcontains one or more selected from the group consisting of the compoundrepresented by the above formula (1) and the resin having a constituentunit derived from the compound. Also, the film forming composition forlithography of the present embodiment may contain both of the compoundof the present embodiment and the resin of the present embodiment.

[Resist Composition]

The resist composition of the present embodiment contains the compoundrepresented by the above formula (1) and/or the resin having aconstituent unit derived from the compound. Also, the resist compositionof the present embodiment may contain both of the compound of thepresent embodiment and the resin of the present embodiment.

It is preferable that the resist composition of the present embodimentshould contain a solvent. Examples of the solvent can include, but notparticularly limited to, ethylene glycol monoalkyl ether acetates suchas ethylene glycol monomethyl ether acetate, ethylene glycol monoethylether acetate, ethylene glycol mono-n-propyl ether acetate, and ethyleneglycol mono-n-butyl ether acetate; ethylene glycol monoalkyl ethers suchas ethylene glycol monomethyl ether and ethylene glycol monoethyl ether;propylene glycol monoalkyl ether acetates such as propylene glycolmonomethyl ether acetate (PGMEA), propylene glycol monoethyl etheracetate, propylene glycol mono-n-propyl ether acetate, and propyleneglycol mono-n-butyl ether acetate; propylene glycol monoalkyl etherssuch as propylene glycol monomethyl ether (PGME) and propylene glycolmonoethyl ether; ester lactates such as methyl lactate, ethyl lactate,n-propyl lactate, n-butyl lactate, and n-amyl lactate; aliphaticcarboxylic acid esters such as methyl acetate, ethyl acetate, n-propylacetate, n-butyl acetate, n-amyl acetate, n-hexyl acetate, methylpropionate, and ethyl propionate; other esters such as methyl3-methoxypropionate, ethyl 3-methoxypropionate, methyl3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl3-methoxy-2-methylpropionate, 3-methoxybutylacetate,3-methyl-3-methoxybutylacetate, butyl 3-methoxy-3-methylpropionate,butyl 3-methoxy-3-methylbutyrate, methyl acetoacetate, methyl pyruvate,and ethyl pyruvate; aromatic hydrocarbons such as toluene and xylene;ketones such as 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone(CPN), and cyclohexanone (CHN); amides such as N,N-dimethylformamide,N-methylacetamide, N,N-dimethylacetamide, and N-methylpyrrolidone; andlactones such as γ-lactone. These solvents can be used alone or incombination of two or more kinds.

The solvent used in the present embodiment is preferably a safe solvent,more preferably at least one selected from PGMEA, PGME, CHN, CPN,2-heptanone, anisole, butyl acetate, ethyl propionate, and ethyllactate, and still more preferably at least one selected from PGMEA,PGME, and CHN.

In the present embodiment, the amount of the solid component and theamount of the solvent are not particularly limited, but preferably thesolid component is 1 to 80% by mass and the solvent is 20 to 99% bymass, more preferably the solid component is 1 to 50% by mass and thesolvent is 50 to 99% by mass, still more preferably the solid componentis 2 to 40% by mass and the solvent is 60 to 98% by mass, andparticularly preferably the solid component is 2 to 10% by mass and thesolvent is 90 to 98% by mass, based on 100% by mass of the total mass ofthe amount of the solid component and the solvent.

The resist composition of the present embodiment may contain at leastone selected from the group consisting of an acid generating agent (C),an acid crosslinking agent (G), an acid diffusion controlling agent (E),and a further component (F), as other solid components. In the presentspecification, the solid components refer to components except for thesolvent.

Hereinafter, the acid generating agent (C), the acid crosslinking agent(G), the acid diffusion controlling agent (E), and the further component(F) will be described.

[Acid Generating Agent (C)]

The resist composition of the present embodiment preferably containsacid generating agents (C) generating an acid directly or indirectly byirradiation of any radiation selected from visible light, ultraviolet,excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ionbeam. The acid generating agent (C) is not particularly limited, and,for example, an acid generating agent described in InternationalPublication No. WO2013/024778 can be used. The acid generating agent (C)can be used alone or in combination of two or more kinds.

The amount of the acid generating agent (C) used is preferably 0.001 to49% by mass of the total weight of the solid components, more preferably1 to 40% by mass, still more preferably 3 to 30% by mass, andparticularly preferably 10 to 25% by mass. By using the acid generatingagent (C) within the above range, a pattern profile with highsensitivity and low edge roughness is obtained. In the presentembodiment, the acid generation method is not particularly limited aslong as an acid is generated in the system. By using excimer laserinstead of ultraviolet such as g-ray and i-ray, finer processing ispossible, and also by using electron beam, extreme ultraviolet, X-ray orion beam as a high energy ray, further finer processing is possible.

[Acid Crosslinking Agent (G)]

In the present embodiment, the resist composition preferably containsone or more acid crosslinking agents (G). The acid crosslinking agent(G) is a compound capable of intramolecular or intermolecularcrosslinking the component (A) in the presence of the acid generatedfrom the acid generating agent (C). Examples of such an acidcrosslinking agent (G) include a compound having one or more groups(hereinafter, referred to as “crosslinkable group”) capable ofcrosslinking the component (A).

Specific examples of such a crosslinkable group can include (i) ahydroxyalkyl group such as a hydroxy (C1-C6 alkyl group), a C1-C6 alkoxy(C1-C6 alkyl group), and an acetoxy (C1-C6 alkyl group), or a groupderived therefrom; (ii) a carbonyl group such as a formyl group and acarboxy (C1-C6 alkyl group), or a group derived therefrom; (iii) anitrogenous group-containing group such as a dimethylaminomethyl group,a diethylaminomethyl group, a dimethylolaminomethyl group, adiethylolaminomethyl group, and a morpholinomethyl group; (iv) aglycidyl group-containing group such as a glycidyl ether group, aglycidyl ester group, and a glycidylamino group; (v) a group derivedfrom an aromatic group such as a C1-C6 allyloxy (C1-C6 alkyl group) anda C1-C6 aralkyloxy (C1-C6 alkyl group) such as a benzyloxymethyl groupand a benzoyloxymethyl group; and (vi) a polymerizable multiplebond-containing group such as a vinyl group and a isopropenyl group. Asthe crosslinkable group of the acid crosslinking agent (G) of thepresent embodiment, a hydroxyalkyl group and an alkoxyalkyl group or thelike are preferable, and an alkoxymethyl group is particularlypreferable.

The acid crosslinking agent (G) having the above crosslinkable group isnot particularly limited, and, for example, an acid crosslinking agentdescribed in International Publication No. WO2013/024778 can be used.The acid crosslinking agent (G) can be used alone or in combination oftwo or more kinds.

In the present embodiment, the amount of the acid crosslinking agent (G)used is preferably 0.5 to 49% by mass of the total weight of the solidcomponents, more preferably 0.5 to 40% by mass, still more preferably 1to 30% by mass, and particularly preferably 2 to 20% by mass. When thecontent ratio of the above acid crosslinking agent (G) is 0.5% by massor more, the inhibiting effect of the solubility of a resist film in analkaline developing solution is improved, and a decrease in the filmremaining rate, and occurrence of swelling and meandering of a patterncan be inhibited, which is preferable. On the other hand, when thecontent is 49% by mass or less, a decrease in heat resistance as aresist can be inhibited, which is preferable.

[Acid Diffusion Controlling Agent (E)]

In the present embodiment, the resist composition may contain an aciddiffusion controlling agent (E) having a function of controllingdiffusion of an acid generated from an acid generating agent byradiation irradiation in a resist film to inhibit any unpreferablechemical reaction in an unexposed region or the like. By using such anacid diffusion controlling agent (E), the storage stability of a resistcomposition is improved. Also, along with the improvement of theresolution, the line width change of a resist pattern due to variationin the post exposure delay time before radiation irradiation and thepost exposure delay time after radiation irradiation can be inhibited,and the composition has extremely excellent process stability. Such anacid diffusion controlling agent (E) is not particularly limited, andexamples include a radiation degradable basic compound such as anitrogen atom-containing basic compound, a basic sulfonium compound, anda basic iodonium compound.

The above acid diffusion controlling agent (E) is not particularlylimited, and, for example, an acid diffusion controlling agent describedin International Publication No. WO2013/024778 can be used. The aciddiffusion controlling agent (E) can be used alone or in combination oftwo or more kinds.

The content of the acid diffusion controlling agent (E) is preferably0.001 to 49% by mass of the total weight of the solid component, morepreferably 0.01 to 10% by mass, still more preferably 0.01 to 5% bymass, and particularly preferably 0.01 to 3% by mass. Within the aboverange, a decrease in resolution, and deterioration of the pattern shapeand the dimension fidelity or the like can be prevented. Moreover, eventhough the post exposure delay time from electron beam irradiation toheating after radiation irradiation becomes longer, the shape of thepattern upper layer portion does not deteriorate. When the content is10% by mass or less, a decrease in sensitivity, and developability ofthe unexposed portion or the like can be prevented. By using such anacid diffusion controlling agent, the storage stability of a resistcomposition improves, also along with improvement of the resolution, theline width change of a resist pattern due to variation in the postexposure delay time before radiation irradiation and the post exposuredelay time after radiation irradiation can be inhibited, and thecomposition is extremely excellent process stability.

[Further Component (F)]

To the resist composition of the present embodiment, if required, as thefurther component (F), one kind or two kinds or more of various additiveagents such as a dissolution promoting agent, a dissolution controllingagent, a sensitizing agent, a surfactant, and an organic carboxylic acidor an oxo acid of phosphor or derivative thereof can be added.

[Dissolution Promoting Agent]

A low molecular weight dissolution promoting agent is a component havinga function of increasing the solubility of a compound represented by theformula (1) in a developing solution to moderately increase thedissolution rate of the compound upon developing, when the solubility ofthe compound is too low. The low molecular weight dissolution promotingagent can be used, if required. Examples of the dissolution promotingagent can include low molecular weight phenolic compounds, such asbisphenols and tris(hydroxyphenyl)methane. These dissolution promotingagents can be used alone or in mixture of two or more kinds.

The content of the dissolution promoting agent, which is arbitrarilyadjusted according to the kind of the compound to be used, is preferably0 to 49% by mass of the total weight of the solid component, morepreferably 0 to 5% by mass, still more preferably 0 to 1% by mass, andparticularly preferably 0% by mass.

[Dissolution Controlling Agent]

The dissolution controlling agent is a component having a function ofcontrolling the solubility of the compound represented by the formula(1) in a developing solution to moderately decrease the dissolution rateupon developing, when the solubility of the compound is too high. Assuch a dissolution controlling agent, the one which does not chemicallychange in steps such as calcination of resist coating, radiationirradiation, and development is preferable.

The dissolution controlling agent is not particularly limited, andexamples can include aromatic hydrocarbons such as phenanthrene,anthracene, and acenaphthene; ketones such as acetophenone,benzophenone, and phenyl naphthyl ketone; and sulfones such as methylphenyl sulfone, diphenyl sulfone, and dinaphthyl sulfone. Thesedissolution controlling agents can be used alone or in two or morekinds.

The content of the dissolution controlling agent, which is arbitrarilyadjusted according to the kind of the compound to be used, is preferably0 to 49% by mass of the total weight of the solid component, morepreferably 0 to 5% by mass, still more preferably 0 to 1% by mass, andparticularly preferably 0% by mass.

[Sensitizing Agent]

The sensitizing agent is a component having a function of absorbingirradiated radiation energy, transmitting the energy to the acidgenerating agent (C), and thereby increasing the acid production amount,and improving the apparent sensitivity of a resist. Such a sensitizingagent is not particularly limited, and examples can includebenzophenones, biacetyls, pyrenes, phenothiazines, and fluorenes. Thesesensitizing agents can be used alone or in two or more kinds.

The content of the sensitizing agent, which is arbitrarily adjustedaccording to the kind of the compound to be used, is preferably 0 to 49%by mass of the total weight of the solid component, more preferably 0 to5% by mass, still more preferably 0 to 1% by mass, and particularlypreferably 0% by mass.

[Surfactant]

The surfactant is a component having a function of improving coatabilityand striation of the resist composition of the present embodiment, anddevelopability of a resist or the like. Such a surfactant may be any ofanionic, cationic, nonionic, and amphoteric surfactants. A preferablesurfactant is a nonionic surfactant. The nonionic surfactant has a goodaffinity with a solvent used in production of resist compositions andmore effects. Examples of the nonionic surfactant include, but notparticularly limited to, a polyoxyethylene higher alkyl ethers,polyoxyethylene higher alkyl phenyl ethers, and higher fatty aciddiesters of polyethylene glycol. Examples of commercially availableproducts include, hereinafter by trade name, EFTOP (manufactured byJemco Inc.), MEGAFAC (manufactured by DIC Corporation), Fluorad(manufactured by Sumitomo 3M Limited), AsahiGuard, Surflon(hereinbefore, manufactured by Asahi Glass Co., Ltd.), Pepole(manufactured by Toho Chemical Industry Co., Ltd.), KP (manufactured byShin-Etsu Chemical Co., Ltd.), and Polyflow (manufactured by KyoeishaChemical Co., Ltd.).

The content of the surfactant, which is arbitrarily adjusted accordingto the kind of the compound to be used, is preferably 0 to 49% by massof the total weight of the solid component, more preferably 0 to 5% bymass, still more preferably 0 to 1% by mass, and particularly preferably0% by mass.

[Organic Carboxylic Acid or Oxo Acid of Phosphor or Derivative Thereof]

For the purpose of prevention of sensitivity deterioration orimprovement of a resist pattern shape and post exposure delay stabilityor the like, and as an additional optional component, the resistcomposition of the present embodiment can contain an organic carboxylicacid or an oxo acid of phosphor or derivative thereof. The organiccarboxylic acid or the oxo acid of phosphor or derivative thereof can beused in combination with the acid diffusion controlling agent, or may beused alone. The organic carboxylic acid is, for example, suitablymalonic acid, citric acid, malic acid, succinic acid, benzoic acid,salicylic acid, or the like. Examples of the oxo acid of phosphor orderivative thereof include phosphoric acid or derivative thereof such asester including phosphoric acid, di-n-butyl ester phosphate, anddiphenyl ester phosphate; phosphonic acid or derivative thereof such asester including phosphonic acid, dimethyl ester phosphonate, di-n-butylester phosphonate, phenylphosphonic acid, diphenyl ester phosphonate,and dibenzyl ester phosphonate; and phosphinic acid and derivativethereof such as ester including phosphinic acid and phenylphosphinicacid. Among these, phosphonic acid is particularly preferable.

The organic carboxylic acid or the oxo acid of phosphor or derivativethereof can be used alone or in combination of two or more kinds. Thecontent of the organic carboxylic acid or the oxo acid of phosphor orderivative thereof, which is arbitrarily adjusted according to the kindof the compound to be used, is preferably 0 to 49% by mass of the totalweight of the solid component, more preferably 0 to 5% by mass, stillmore preferably 0 to 1% by mass, and particularly preferably 0% by mass.

[Further Additive Agent Other than Above Additive Agents (DissolutionPromoting Agent, Dissolution Controlling Agent, Sensitizing Agent,Surfactant, and organic carboxylic acid or oxo acid of phosphor orDerivative Thereof)]

Furthermore, the resist composition of the present embodiment cancontain one kind or two kinds or more of additive agents other than theabove dissolution controlling agent, sensitizing agent, surfactant, andorganic carboxylic acid or oxo acid of phosphor or derivative thereof ifrequired. Examples of such an additive agent include a dye, a pigment,and an adhesion aid. For example, the composition contains the dye orthe pigment, and thereby a latent image of the exposed portion isvisualized and influence of halation upon exposure can be alleviated,which is preferable. The composition contains the adhesion aid, andthereby adhesiveness to a substrate can be improved, which ispreferable. Furthermore, examples of other additive agent can include ahalation preventing agent, a storage stabilizing agent, a defoamingagent, and a shape improving agent. Specific examples thereof caninclude 4-hydroxy-4′-methylchalkone.

In the resist composition of the present embodiment, the total contentof the optional component (F) is preferably 0 to 99% by mass of thetotal weight of the solid component, more preferably 0 to 49% by mass,still more preferably 0 to 10% by mass, further preferably 0 to 5% bymass, still further preferably 0 to 1% by mass, and particularlypreferably 0% by mass.

[Content Ratio of Each Component]

In the resist composition of the present embodiment, the content of thecompound and/or the resin of the present embodiment is not particularlylimited, but is preferably 50 to 99.4% by mass of the total mass of thesolid components (summation of solid components including the compoundrepresented by the formula (1), the resin having the compoundrepresented by the formula (1) as a constituent, and optionally usedcomponents such as acid generating agent (C), acid crosslinking agent(G), acid diffusion controlling agent (E), and further component (F)(also referred to as “optional component (F)”), hereinafter the same),more preferably 55 to 90% by mass, still more preferably 60 to 80% bymass, and particularly preferably 60 to 70% by mass. In the case of thecontent, resolution is further improved, and line edge roughness (LER)is further decreased. When both the compound and the resin of thepresent embodiment are contained, the content refers to the total amountof the compound and the resin of the present embodiment.

In the resist composition of the present embodiment, the content ratioof the compound and/or the resin of the present embodiment (component(A)), the acid generating agent (C), the acid crosslinking agent (G),the acid diffusion controlling agent (E), and the optional component (F)(the component (A)/the acid generating agent (C)/the acid crosslinkingagent (G)/the acid diffusion controlling agent (E)/the optionalcomponent (F)) is preferably 50 to 99.4% by mass/0.001 to 49% bymass/0.5 to 49% by mass/0.001 to 49% by mass/0 to 49% by mass based on100% by mass of the solid components of the resist composition, morepreferably 55 to 90% by mass/1 to 40% by mass/0.5 to 40% by mass/0.01 to10% by mass/0 to 5% by mass, still more preferably 60 to 80% by mass/3to 30% by mass/1 to 30% by mass/0.01 to 5% by mass/0 to 1% by mass, andparticularly preferably 60 to 70% by mass/10 to 25% by mass/2 to 20% bymass/0.01 to 3% by mass/0% by mass. The content ratio of each componentis selected from each range so that the summation thereof is 100% bymass. By the above content ratio, performance such as sensitivity,resolution, and developability is excellent. The “solid components”refer to components except for the solvent. “100% by mass of the solidcomponents” refer to 100% by mass of the components except for thesolvent.

The resist composition of the present embodiment is generally preparedby dissolving each component in a solvent upon use into a homogeneoussolution, and then if required, filtering through a filter or the likewith a pore diameter of about 0.2 m, for example.

The resist composition of the present embodiment can contain anadditional resin other than the resin of the present embodiment, ifrequired. Examples of the resin include, but not particularly limitedto, a novolac resin, polyvinyl phenols, polyacrylic acid, polyvinylalcohol, a styrene-maleic anhydride resin, and polymers containing anacrylic acid, vinyl alcohol or vinylphenol as a monomeric unit, andderivatives thereof. The content of the resin is not particularlylimited and is arbitrarily adjusted according to the kind of thecomponent (A) to be used, and is preferably 30 parts by mass or less per100 parts by mass of the component (A), more preferably 10 parts by massor less, still more preferably 5 parts by mass or less, and particularlypreferably 0 part by mass.

[Physical Properties and the Like of Resist Composition]

The resist composition of the present embodiment can form an amorphousfilm by spin coating. Also, the resist composition of the presentembodiment can be applied to a general semiconductor production process.Any of positive type and negative type resist patterns can beindividually prepared depending on the kind of a developing solution tobe used.

In the case of a positive type resist pattern, the dissolution rate ofthe amorphous film formed by spin coating with the resist composition ofthe present embodiment in a developing solution at 23° C. is preferably5 angstrom/sec or less, more preferably 0.05 to 5 angstrom/sec, andstill more preferably 0.0005 to 5 angstrom/sec. When the dissolutionrate is 5 angstrom/sec or less, the above portion is insoluble in adeveloping solution, and thus the amorphous film can form a resist. Whenthe amorphous film has a dissolution rate of 0.0005 angstrom/sec ormore, the resolution may improve. It is presumed that this is becausedue to the change in the solubility before and after exposure of thecomponent (A), contrast at the interface between the exposed portionbeing dissolved in a developing solution and the unexposed portion notbeing dissolved in a developing solution is increased. Also, there areeffects of reducing LER and defects.

In the case of a negative type resist pattern, the dissolution rate ofthe amorphous film formed by spin coating with the resist composition ofthe present embodiment in a developing solution at 23° C. is preferably10 angstrom/sec or more. When the dissolution rate is 10 angstrom/sec ormore, the amorphous film more easily dissolves in a developing solution,and is more suitable for a resist. When the amorphous film has adissolution rate of 10 angstrom/sec or more, the resolution may improve.It is presumed that this is because the micro surface portion of thecomponent (A) dissolves, and LER is reduced. Also, there are effects ofreducing defects.

The dissolution rate can be determined by immersing the amorphous filmin a developing solution for a predetermined period of time at 23° C.and then measuring the film thickness before and after immersion by apublicly known method such as visual, ellipsometric, or QCM method.

In the case of a positive type resist pattern, the dissolution rate ofthe portion exposed by radiation such as KrF excimer laser, extremeultraviolet, electron beam or X-ray, of the amorphous film formed byspin coating with the resist composition of the present embodiment, in adeveloping solution at 23° C. is preferably 10 angstrom/sec or more.When the dissolution rate is 10 angstrom/sec or more, the amorphous filmmore easily dissolves in a developing solution, and is more suitable fora resist. When the amorphous film has a dissolution rate of 10angstrom/sec or more, the resolution may improve. It is presumed thatthis is because the micro surface portion of the component (A)dissolves, and LER is reduced. Also, there are effects of reducingdefects.

In the case of a negative type resist pattern, the dissolution rate ofthe portion exposed by radiation such as KrF excimer laser, extremeultraviolet, electron beam or X-ray, of the amorphous film formed byspin coating with the resist composition of the present embodiment, in adeveloping solution at 23° C. is preferably 5 angstrom/sec or less, morepreferably 0.05 to 5 angstrom/sec, and still more preferably 0.0005 to 5angstrom/sec. When the dissolution rate is 5 angstrom/sec or less, theabove portion is insoluble in a developing solution, and thus theamorphous film can form a resist. When the amorphous film has adissolution rate of 0.0005 angstrom/sec or more, the resolution mayimprove. It is presumed that this is because due to the change in thesolubility before and after exposure of the component (A), contrast atthe interface between the unexposed portion being dissolved in adeveloping solution and the exposed portion not being dissolved in adeveloping solution is increased. Also, there are effects of reducingLER and defects.

[Radiation-Sensitive Composition]

The radiation-sensitive composition of the present embodiment is aradiation-sensitive composition containing the compound of the presentembodiment and/or the resin of the present embodiment (A), an opticallyactive diazonaphthoquinone compound (B), and a solvent, wherein thecontent of the solvent is 20 to 99% by mass based on 100% by mass intotal of the radiation-sensitive composition; and the content ofcomponents except for the solvent is 1 to 80% by mass based on 100% bymass in total of the radiation-sensitive composition.

The component (A) to be contained in the radiation-sensitive compositionof the present embodiment is used in combination with the opticallyactive diazonaphthoquinone compound (B) mentioned later and is useful asa base material for positive type resists that becomes a compound easilysoluble in a developing solution by irradiation with g-ray, h-ray,i-ray, KrF excimer laser, ArF excimer laser, extreme ultraviolet,electron beam, or X-ray. Although the properties of the component (A)are not largely altered by g-ray, h-ray, i-ray, KrF excimer laser, ArFexcimer laser, extreme ultraviolet, electron beam, or X-ray, theoptically active diazonaphthoquinone compound (B) poorly soluble in adeveloping solution is converted to an easily soluble compound so that aresist pattern can be formed in a development step.

Since the component (A) to be contained in the radiation-sensitivecomposition of the present embodiment is a relatively low molecularweight compound as shown in the above formula (1), the obtained resistpattern has very small roughness. In the above formula (1), at least oneselected from the group consisting of R¹ to R⁵ is preferably a groupcontaining an iodine atom. In the case of applying the component (A)having such a group containing an iodine atom which is a preferable formto the radiation-sensitive composition of the present embodiment, theability to absorb radiation such as electron beam, extreme ultraviolet(EUV), or X-ray is increased. As a result, this enables the enhancementof the sensitivity, which is very preferable.

The glass transition temperature of the component (A) to be contained inthe radiation-sensitive composition of the present embodiment ispreferably 100° C. or higher, more preferably 120° C. or higher, stillmore preferably 140° C. or higher, and particularly preferably 150° C.or higher. The upper limit of the glass transition temperature of thecomponent (A) is not particularly limited and is, for example, 400° C.When the glass transition temperature of the component (A) falls withinthe above range, the resulting radiation-sensitive composition has heatresistance capable of maintaining a pattern shape in a semiconductorlithography process, and improves performance such as high resolution.

The heat of crystallization determined by the differential scanningcalorimetry of the glass transition temperature of the component (A) tobe contained in the radiation-sensitive composition of the presentembodiment is preferably less than 20 J/g. (Crystallizationtemperature)−(Glass transition temperature) is preferably 70° C. ormore, more preferably 80° C. or more, still more preferably 100° C. ormore, and particularly preferably 130° C. or more. When the heat ofcrystallization is less than 20 J/g or (Crystallizationtemperature)−(Glass transition temperature) falls within the aboverange, the radiation-sensitive composition easily forms an amorphousfilm by spin coating, can maintain film formability necessary for aresist over a long period, and can improve resolution.

In the present embodiment, the above heat of crystallization,crystallization temperature, and glass transition temperature can bedetermined by differential scanning calorimetry using “DSC/TA-50WS”manufactured by Shimadzu Corp. For example, about 10 mg of a sample isplaced in an unsealed container made of aluminum, and the temperature israised to the melting point or more at a temperature increase rate of20° C./min in a nitrogen gas stream (50 mL/min). After quenching, againthe temperature is raised to the melting point or more at a temperatureincrease rate of 20° C./min in a nitrogen gas stream (30 mL/min). Afterfurther quenching, again the temperature is raised to 400° C. at atemperature increase rate of 20° C./min in a nitrogen gas stream (30mL/min). The temperature at the middle point (where the specific heat ischanged into the half) of steps in the baseline shifted in a step-likepattern is defined as the glass transition temperature (Tg). Thetemperature of the subsequently appearing exothermic peak is defined asthe crystallization temperature. The heat is determined from the area ofa region surrounded by the exothermic peak and the baseline and definedas the heat of crystallization.

The component (A) to be contained in the radiation-sensitive compositionof the present embodiment is preferably low sublimable at 100° C. orlower, preferably 120° C. or lower, more preferably 130° C. or lower,still more preferably 140° C. or lower, and particularly preferably 150°C. or lower at normal pressure. The low sublimability means that inthermogravimetry, weight reduction when the resist base material is keptat a predetermined temperature for 10 minutes is 10% or less, preferably5% or less, more preferably 3% or less, still more preferably 1% orless, and particularly preferably 0.1% or less. The low sublimabilitycan prevent an exposure apparatus from being contaminated by outgassingupon exposure. In addition, a good pattern shape with low roughness canbe obtained.

The component (A) to be contained in the radiation-sensitive compositionof the present embodiment dissolves at preferably 1% by mass or more,more preferably 5% by mass or more, and still more preferably 10% bymass or more at 23° C. in a solvent that is selected from propyleneglycol monomethyl ether acetate (PGMEA), propylene glycol monomethylether (PGME), cyclohexanone (CHN), cyclopentanone (CPN), 2-heptanone,anisole, butyl acetate, ethyl propionate, and ethyl lactate and exhibitsthe highest ability to dissolve the component (A). Particularlypreferably, the component (A) dissolves at 20% by mass or more at 23° C.in a solvent that is selected from PGMEA, PGME, and CHN and exhibits thehighest ability to dissolve the resist base material (A). Particularlypreferably, the component (A) dissolves at 20% by mass or more at 23° C.in PGMEA. When the above conditions are met, the radiation-sensitivecomposition is easily used in a semiconductor production process at afull production scale.

[Optically Active Diazonaphthoquinone Compound (B)]

The optically active diazonaphthoquinone compound (B) to be contained inthe radiation-sensitive composition of the present embodiment is adiazonaphthoquinone substance including a polymer or non-polymeroptically active diazonaphthoquinone compound and is not particularlylimited as long as it is generally used as a photosensitive component(sensitizing agent) in positive type resist compositions. One kind ortwo or more kinds can be optionally selected and used.

Such a sensitizing agent is preferably a compound obtained by reactingnaphthoquinonediazide sulfonic acid chloride, benzoquinonediazidesulfonic acid chloride, or the like with a low molecular weight compoundor a high molecular weight compound having a functional groupcondensable with these acid chlorides. Herein, examples of the abovefunctional group condensable with the acid chlorides include, but notparticularly limited to, a hydroxyl group and an amino group.Particularly, a hydroxyl group is preferable. Examples of the compoundcontaining a hydroxyl group condensable with the acid chlorides caninclude, but not particularly limited to, hydroquinone, resorcin,hydroxybenzophenones such as 2,4-dihydroxybenzophenone,2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone,2,4,4′-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone,2,2′,4,4′-tetrahydroxybenzophenone, and2,2′,3,4,6′-pentahydroxybenzophenone, hydroxyphenylalkanes such asbis(2,4-dihydroxyphenyl)methane, bis(2,3,4-trihydroxyphenyl)methane, andbis(2,4-dihydroxyphenyl)propane, and hydroxytriphenylmethanes such as4,4′,3″,4″-tetrahydroxy-3,5,3′,5′-tetramethyltriphenylmethane and4,4′,2″,3″,4″-pentahydroxy-3,5,3′,5′-tetramethyltriphenylmethane.

Preferable examples of the acid chloride such as naphthoquinonediazidesulfonic acid chloride or benzoquinonediazide sulfonic acid chlorideinclude 1,2-naphthoquinonediazide-5-sulfonyl chloride and1,2-naphthoquinonediazide-4-sulfonyl chloride.

The radiation-sensitive composition of the present embodiment ispreferably prepared by, for example, dissolving each component in asolvent upon use into a homogeneous solution, and then if required,filtering through a filter or the like with a pore diameter of about 0.2m, for example.

[Solvent]

Examples of the solvent that can be used in the radiation-sensitivecomposition of the present embodiment include, but not particularlylimited to, propylene glycol monomethyl ether acetate, propylene glycolmonomethyl ether, cyclohexanone, cyclopentanone, 2-heptanone, anisole,butyl acetate, ethyl propionate, and ethyl lactate. Among them,propylene glycol monomethyl ether acetate, propylene glycol monomethylether, or cyclohexanone is preferable. The solvent may be used alone asone kind or may be used in combination of two or more kinds.

The content of the solvent is 20 to 99% by mass based on 100% by mass intotal of the radiation-sensitive composition, preferably 50 to 99% bymass, more preferably 60 to 98% by mass, and particularly preferably 90to 98% by mass.

The content of components except for the solvent (solid components) is 1to 80% by mass based on 100% by mass in total of the radiation-sensitivecomposition, preferably 1 to 50% by mass, more preferably 2 to 40% bymass, particularly preferably 2 to 10% by mass.

[Properties of Radiation-Sensitive Composition]

The radiation-sensitive composition of the present embodiment can forman amorphous film by spin coating. Also, the radiation-sensitivecomposition of the present embodiment can be applied to a generalsemiconductor production process. Any of positive type and negative typeresist patterns can be individually prepared depending on the kind of adeveloping solution to be used.

In the case of a positive type resist pattern, the dissolution rate ofthe amorphous film formed by spin coating with the radiation-sensitivecomposition of the present embodiment in a developing solution at 23° C.is preferably 5 angstrom/sec or less, more preferably 0.05 to 5angstrom/sec, and still more preferably 0.0005 to 5 angstrom/sec. Whenthe dissolution rate is 5 angstrom/sec or less, the above portion isinsoluble in a developing solution, and thus the amorphous film can forma resist. When the amorphous film has a dissolution rate of 0.0005angstrom/sec or more, the resolution may improve. It is presumed thatthis is because due to the change in the solubility before and afterexposure of the component (A), contrast at the interface between theexposed portion being dissolved in a developing solution and theunexposed portion not being dissolved in a developing solution isincreased. Also, there are effects of reducing LER and defects.

In the case of a negative type resist pattern, the dissolution rate ofthe amorphous film formed by spin coating with the radiation-sensitivecomposition of the present embodiment in a developing solution at 23° C.is preferably 10 angstrom/sec or more. When the dissolution rate is 10angstrom/sec or more, the amorphous film more easily dissolves in adeveloping solution, and is more suitable for a resist. When theamorphous film has a dissolution rate of 10 angstrom/sec or more, theresolution may improve. It is presumed that this is because the microsurface portion of the component (A) dissolves, and LER is reduced.Also, there are effects of reducing defects.

The dissolution rate can be determined by immersing the amorphous filmin a developing solution for a predetermined period of time at 23° C.and then measuring the film thickness before and after immersion by apublicly known method such as visual, ellipsometric, or QCM method.

In the case of a positive type resist pattern, the dissolution rate ofthe exposed portion after irradiation with radiation such as KrF excimerlaser, extreme ultraviolet, electron beam or X-ray, or after heating at20 to 500° C., of the amorphous film formed by spin coating with theradiation-sensitive composition of the present embodiment, in adeveloping solution at 23° C. is preferably 10 angstrom/sec or more,more preferably 10 to 10000 angstrom/sec, and still more preferably 100to 1000 angstrom/sec. When the dissolution rate is 10 angstrom/sec ormore, the amorphous film more easily dissolves in a developing solution,and is more suitable for a resist. When the amorphous film has adissolution rate of 10000 angstrom/sec or less, the resolution mayimprove. It is presumed that this is because the micro surface portionof the component (A) dissolves, and LER is reduced. Also, there areeffects of reducing defects.

In the case of a negative type resist pattern, the dissolution rate ofthe exposed portion after irradiation with radiation such as KrF excimerlaser, extreme ultraviolet, electron beam or X-ray, or after heating at20 to 500° C., of the amorphous film formed by spin coating with theradiation-sensitive composition of the present embodiment, in adeveloping solution at 23° C. is preferably 5 angstrom/sec or less, morepreferably 0.05 to 5 angstrom/sec, and still more preferably 0.0005 to 5angstrom/sec. When the dissolution rate is 5 angstrom/sec or less, theabove portion is insoluble in a developing solution, and thus theamorphous film can form a resist. When the amorphous film has adissolution rate of 0.0005 angstrom/sec or more, the resolution mayimprove. It is presumed that this is because due to the change in thesolubility before and after exposure of the component (A), contrast atthe interface between the unexposed portion being dissolved in adeveloping solution and the exposed portion not being dissolved in adeveloping solution is increased. Also, there are effects of reducingLER and defects.

[Content Ratio of Each Component]

In the radiation-sensitive composition of the present embodiment, thecontent of the component (A) is preferably 1 to 99% by mass of the totalweight of the solid components (summation of the component (A), theoptically active diazonaphthoquinone compound (B), and optionally usedsolid components such as further component (D), hereinafter the same),more preferably 5 to 95% by mass, still more preferably 10 to 90% bymass, and particularly preferably 25 to 75% by mass. When the content ofthe component (A) falls within the above range, the radiation-sensitivecomposition of the present embodiment can produce a pattern with highsensitivity and low roughness.

In the radiation-sensitive composition of the present embodiment, thecontent of the optically active diazonaphthoquinone compound (B) ispreferably 1 to 99% by mass of the total weight of the solid components(summation of the component (A), the optically activediazonaphthoquinone compound (B), and optionally used solid componentssuch as further component (D), hereinafter the same), more preferably 5to 95% by mass, still more preferably 10 to 90% by mass, andparticularly preferably 25 to 75% by mass. When the content of theoptically active diazonaphthoquinone compound (B) falls within the aboverange, the radiation-sensitive composition of the present embodiment canproduce a pattern with high sensitivity and low roughness.

[Further Component (D)]

To the radiation-sensitive composition of the present embodiment, ifrequired, as a component other than the component (A) and the opticallyactive diazonaphthoquinone compound (B), one kind or two kinds or moreof various additive agents such as the above acid generating agent, acidcrosslinking agent, acid diffusion controlling agent, dissolutionpromoting agent, dissolution controlling agent, sensitizing agent,surfactant, and organic carboxylic acid or oxo acid of phosphor orderivative thereof can be added. In the present specification, thefurther component (D) is also referred to as an optional component (D).

The content ratio of the component (A), the optically activediazonaphthoquinone compound (B), and the further optional component (D)that may be optionally contained in the radiation-sensitive composition((A)/(B)/(D)) is preferably 1 to 99% by mass/99 to 1% by mass/0 to 98%by mass, more preferably 5 to 95% by mass/95 to 5% by mass/0 to 49% bymass, still more preferably 10 to 90% by mass/90 to 10% by mass/0 to 10%by mass, particularly preferably 20 to 80% by mass/80 to 20% by mass/0to 5% by mass, and most preferably 25 to 75% by mass/75 to 25% bymass/0% by mass, based on 100% by mass of the solid components of theradiation-sensitive composition.

The content ratio of each component is selected from each range so thatthe summation thereof is 100% by mass. When the content ratio of eachcomponent falls within the above range, the radiation-sensitivecomposition of the present embodiment is excellent in performance suchas sensitivity and resolution, in addition to roughness.

The radiation-sensitive composition of the present embodiment maycontain a resin other than the resin of the present embodiment. Examplesof such a resin include a novolac resin, polyvinyl phenols, polyacrylicacid, polyvinyl alcohol, a styrene-maleic anhydride resin, and polymerscontaining an acrylic acid, vinyl alcohol or vinylphenol as a monomericunit, and derivatives thereof. The content of these resins, which isarbitrarily adjusted according to the kind of the component (A) to beused, is preferably 30 parts by mass or less per 100 parts by mass ofthe component (A), more preferably 10 parts by mass or less, still morepreferably 5 parts by mass or less, and particularly preferably 0 partby mass.

[Method for Producing Amorphous Film]

The method for producing an amorphous film according to the presentembodiment comprises the step of forming an amorphous film on asubstrate using the above radiation-sensitive composition.

[Resist Pattern Formation Method Using Radiation-Sensitive Composition]

A resist pattern formation method using the radiation-sensitivecomposition of the present embodiment includes the steps of: forming aresist film on a substrate using the above radiation-sensitivecomposition; exposing at least a portion of the formed resist film; anddeveloping the exposed resist film, thereby forming a resist pattern.Specifically, the same operation as in the following resist patternformation method using the resist composition can be performed.

[Resist Pattern Formation Method Using Resist Composition]

A resist pattern formation method using the resist composition of thepresent embodiment includes the steps of: forming a resist film on asubstrate using the above resist composition of the present embodiment;exposing at least a portion of the formed resist film; and developingthe exposed resist film, thereby forming a resist pattern. The resistpattern according to the present embodiment can also be formed as anupper layer resist in a multilayer process.

Examples of the resist pattern formation method include, but notparticularly limited to, the following methods. A resist film is formedby coating a conventionally publicly known substrate with the aboveresist composition of the present embodiment using a coating means suchas spin coating, flow casting coating, and roll coating. Theconventionally publicly known substrate is not particularly limited. Forexample, a substrate for electronic components, and the one having apredetermined wiring pattern formed thereon, or the like can beexemplified. More specific examples include a substrate made of a metalsuch as a silicon wafer, copper, chromium, iron and aluminum, and aglass substrate. Examples of a wiring pattern material include copper,aluminum, nickel, and gold. Also if required, the substrate may be asubstrate having an inorganic and/or organic film provided thereon.Examples of the inorganic film include an inorganic antireflection film(inorganic BARC). Examples of the organic film include an organicantireflection film (organic BARC). Surface treatment with hexamethylenedisilazane or the like may be conducted.

Next, the coated substrate is heated if required. The heating conditionsvary according to the compounding composition of the resist composition,or the like, but are preferably 20 to 250° C., and more preferably 20 to150° C. By heating, the adhesiveness of a resist to a substrate mayimprove, which is preferable. Then, the resist film is exposed to adesired pattern by any radiation selected from the group consisting ofvisible light, ultraviolet, excimer laser, electron beam, extremeultraviolet (EUV), X-ray, and ion beam. The exposure conditions or thelike are arbitrarily selected according to the compounding compositionof the resist composition, or the like. In the present embodiment, inorder to stably form a fine pattern with a high degree of accuracy inexposure, the resist film is preferably heated after radiationirradiation.

Next, by developing the exposed resist film in a developing solution, apredetermined resist pattern is formed. As the developing solution, asolvent having a solubility parameter (SP value) close to that of thecomponent (A) to be used is preferably selected. A polar solvent such asa ketone-based solvent, an ester-based solvent, an alcohol-basedsolvent, an amide-based solvent, and an ether-based solvent; and ahydrocarbon-based solvent, or an alkaline aqueous solution can be used.

Examples of the ketone-based solvent include 1-octanone, 2-octanone,1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, 2-hexanone,diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone,methyl ethyl ketone, methyl isobutyl ketone, acetylacetone,acetonylacetone, ionone, diacetonyl alcohol, acetyl carbinol,acetophenone, methyl naphthyl ketone, isophorone, and propylenecarbonate.

Examples of the ester-based solvent include methyl acetate, butylacetate, ethyl acetate, isopropyl acetate, amyl acetate, propyleneglycol monomethyl ether acetate, ethylene glycol monoethyl etheracetate, diethylene glycol monobutyl ether acetate, diethylene glycolmonoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutylacetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate,butyl formate, propyl formate, ethyl lactate, butyl lactate, and propyllactate.

Examples of the alcohol-based solvent include an alcohol such as methylalcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol(2-propanol), n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol,isobutyl alcohol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptylalcohol, n-octyl alcohol, and n-decanol; a glycol-based solvent such asethylene glycol, diethylene glycol, and triethylene glycol; and a glycolether-based solvent such as ethylene glycol monomethyl ether, propyleneglycol monomethyl ether, ethylene glycol monoethyl ether, propyleneglycol monoethyl ether, diethylene glycol monomethyl ether, triethyleneglycol monoethyl ether, and methoxymethyl butanol.

Examples of the ether-based solvent include dioxane and tetrahydrofuranin addition to the glycol ether-based solvents.

Examples of the amide-based solvent that can be used includeN-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide,phosphoric hexamethyltriamide, and 1,3-dimethyl-2-imidazolidinone.

Examples of the hydrocarbon-based solvent include an aromatichydrocarbon-based solvent such as toluene and xylene; and an aliphatichydrocarbon-based solvent such as pentane, hexane, octane, and decane.

A plurality of above solvents may be mixed, or the solvent may be usedby mixing the solvent with a solvent other than those described above orwater within the range having performance. In order to sufficientlyexhibit the effect of the present invention, the water content ratio asthe whole developing solution is preferably less than 70% by mass andless than 50% by mass, more preferably less than 30% by mass, andfurther preferably less than 10% by mass. Particularly preferably, thedeveloping solution is substantially moisture free. That is, the contentof the organic solvent in the developing solution is not particularlylimited, and is preferably 30% by mass or more and 100% by mass or lessbased on the total amount of the developing solution, preferably 50% bymass or more and 100% by mass or less, more preferably 70% by mass ormore and 100% by mass or less, still more preferably 90% by mass or moreand 100% by mass or less, and particularly preferably 95% by mass ormore and 100% by mass or less.

Examples of the alkaline aqueous solution include an alkaline compoundsuch as mono-, di- or tri-alkylamines, mono-, di- or tri-alkanolamines,heterocyclic amines, tetramethyl ammonium hydroxide (TMAH), and choline.

Particularly, the developing solution containing at least one kind ofsolvent selected from a ketone-based solvent, an ester-based solvent, analcohol-based solvent, an amide-based solvent, and an ether-basedsolvent improves resist performance such as resolution and roughness ofthe resist pattern, which is preferable.

The vapor pressure of the developing solution is preferably 5 kPa orless at 20° C., more preferably 3 kPa or less, and particularlypreferably 2 kPa or less. The evaporation of the developing solution onthe substrate or in a developing cup is inhibited by setting the vaporpressure of the developing solution to 5 kPa or less, to improvetemperature uniformity within a wafer surface, thereby resulting inimprovement in size uniformity within the wafer surface.

Specific examples having a vapor pressure of 5 kPa or less include aketone-based solvent such as 1-octanone, 2-octanone, 1-nonanone,2-nonanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone,methylcyclohexanone, phenylacetone, and methyl isobutyl ketone; anester-based solvent such as butyl acetate, amyl acetate, propyleneglycol monomethyl ether acetate, ethylene glycol monoethyl etheracetate, diethylene glycol monobutyl ether acetate, diethylene glycolmonoethyl ether acetate, ethyl-3-ethoxy propionate, 3-methoxy butylacetate, 3-methyl-3-methoxy butyl acetate, butyl formate, propylformate, ethyl lactate, butyl lactate, and propyl lactate; analcohol-based solvent such as n-propyl alcohol, isopropyl alcohol,n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutylalcohol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octylalcohol, and n-decanol; a glycol-based solvent such as ethylene glycol,diethylene glycol, and triethylene glycol; a glycol ether-based solventsuch as ethylene glycol monomethyl ether, propylene glycol monomethylether, ethylene glycol monoethyl ether, propylene glycol monoethylether, diethylene glycol monomethyl ether, triethylene glycol monoethylether, and methoxymethyl butanol; an ether-based solvent such astetrahydrofuran; an amide-based solvent such as N-methyl-2-pyrrolidone,N,N-dimethylacetamide, and N,N-dimethylformamide; an aromatichydrocarbon-based solvent such as toluene and xylene; and an aliphatichydrocarbon-based solvent such as octane and decane.

Specific examples having a vapor pressure of 2 kPa or less which is aparticularly preferable range include a ketone-based solvent such as1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 4-heptanone, 2-hexanone,diisobutyl ketone, cyclohexanone, methylcyclohexanone, andphenylacetone; an ester-based solvent such as butyl acetate, amylacetate, propylene glycol monomethyl ether acetate, ethylene glycolmonoethyl ether acetate, diethylene glycol monobutyl ether acetate,diethylene glycol monoethyl ether acetate, ethyl-3-ethoxy propionate,3-methoxy butyl acetate, 3-methyl-3-methoxy butyl acetate, ethyllactate, butyl lactate, and propyl lactate; an alcohol-based solventsuch as n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutylalcohol, n-hexyl alcohol, 4-methyl-2-pentanol, n-heptyl alcohol, n-octylalcohol, and n-decanol; a glycol-based solvent such as ethylene glycol,diethylene glycol, and triethylene glycol; a glycol ether-based solventsuch as ethylene glycol monomethyl ether, propylene glycol monomethylether, ethylene glycol monoethyl ether, propylene glycol monoethylether, diethylene glycol monomethyl ether, triethylene glycol monoethylether, and methoxymethyl butanol; an amide-based solvent such asN-methyl-2-pyrrolidone, N,N-dimethylacetamide, andN,N-dimethylformamide; an aromatic hydrocarbon-based solvent such asxylene; and an aliphatic hydrocarbon-based solvent such as octane anddecane.

To the developing solution, a surfactant can be added in an appropriateamount, if required. The surfactant is not particularly limited but, forexample, an ionic or nonionic fluorine-based and/or silicon-basedsurfactant can be used. Examples of the fluorine-based and/orsilicon-based surfactant can include the surfactants described inJapanese Patent Laid-Open Nos. 62-36663, 61-226746, 61-226745,62-170950, 63-34540, 7-230165, 8-62834, 9-54432, and 9-5988, and U.S.Pat. Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098,5,576,143, 5,294,511, and 5,824,451. The surfactant is preferably anonionic surfactant. The nonionic surfactant is not particularlylimited, but a fluorine-based surfactant or a silicon-based surfactantis further preferably used.

The amount of the surfactant used is usually 0.001 to 5% by mass basedon the total amount of the developing solution, preferably 0.005 to 2%by mass, and further preferably 0.01 to 0.5% by mass.

The development method is, for example, a method for dipping a substratein a bath filled with a developing solution for a fixed time (dippingmethod), a method for raising a developing solution on a substratesurface by the effect of a surface tension and keeping it still for afixed time, thereby conducting the development (puddle method), a methodfor spraying a developing solution on a substrate surface (sprayingmethod), and a method for continuously ejecting a developing solution ona substrate rotating at a constant speed while scanning a developingsolution ejecting nozzle at a constant rate (dynamic dispense method),or the like may be applied. The time for conducting the patterndevelopment is not particularly limited, but is preferably 10 seconds to90 seconds.

After the step of conducting development, a step of stopping thedevelopment by the replacement with another solvent may be practiced.

A step of rinsing the resist film with a rinsing solution containing anorganic solvent is preferably provided after the development.

The rinsing solution used in the rinsing step after development is notparticularly limited as long as the rinsing solution does not dissolvethe resist pattern cured by crosslinking. A solution containing ageneral organic solvent or water may be used as the rinsing solution. Asthe rinsing solution, a rinsing solution containing at least one kind oforganic solvent selected from a hydrocarbon-based solvent, aketone-based solvent, an ester-based solvent, an alcohol-based solvent,an amide-based solvent, and an ether-based solvent is preferably used.More preferably, after development, a step of rinsing the film by usinga rinsing solution containing at least one kind of organic solventselected from the group consisting of a ketone-based solvent, anester-based solvent, an alcohol-based solvent and an amide-based solventis conducted. Still more preferably, after development, a step ofrinsing the film by using a rinsing solution containing an alcohol-basedsolvent or an ester-based solvent is conducted. Still more preferably,after development, a step of rinsing the film by using a rinsingsolution containing a monohydric alcohol is conducted. Particularlypreferably, after development, a step of rinsing the film by using arinsing solution containing a monohydric alcohol having 5 or more carbonatoms is conducted. The time for rinsing the pattern is not particularlylimited, but is preferably 10 seconds to 90 seconds.

Herein, examples of the monohydric alcohol used in the rinsing stepafter development include a linear, branched or cyclic monohydricalcohol. Specific examples which can be used in the rinsing step include1-butanol, 2-butanol, 3-methyl-1-butanol, tert-butyl alcohol,1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol,1-octanol, 2-hexanol, cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol,3-heptanol, 3-octanol, and 4-octanol or the like. Particularlypreferable examples of monohydric alcohol having 5 or more carbon atomswhich can be used include 1-hexanol, 2-hexanol, 4-methyl-2-pentanol,1-pentanol, and 3-methyl-1-butanol or the like.

A plurality of the components may be mixed, or the component may be usedby mixing the component with an organic solvent other than thosedescribed above.

The water content ratio in the rinsing solution is preferably 10% bymass or less, more preferably 5% by mass or less, and particularlypreferably 3% by mass or less. By setting the water content ratio to 10%by mass or less, better development characteristics can be obtained.

The vapor pressure at 20° C. of the rinsing solution used afterdevelopment is preferably 0.05 kPa or more and 5 kPa or less, morepreferably 0.1 kPa or more and 5 kPa or less, and most preferably 0.12kPa or more and 3 kPa or less. By setting the vapor pressure of therinsing solution to 0.05 kPa or more and 5 kPa or less, the temperatureuniformity in the wafer surface is enhanced and moreover, swelling dueto permeation of the rinsing solution is further inhibited. As a result,the dimensional uniformity in the wafer surface is further improved.

The rinsing solution may also be used after adding an appropriate amountof a surfactant to the rinsing solution.

In the rinsing step, the wafer after development is rinsed using theorganic solvent-containing rinsing solution. The method for rinsingtreatment is not particularly limited. However, for example, a methodfor continuously ejecting a rinsing solution on a substrate spinning ata constant speed (spin coating method), a method for dipping a substratein a bath filled with a rinsing solution for a fixed time (dippingmethod), and a method for spraying a rinsing solution on a substratesurface (spraying method), or the like can be applied. Above all, it ispreferable to conduct the rinsing treatment by the spin coating methodand after the rinsing, spin the substrate at a rotational speed of 2,000rpm to 4,000 rpm, to remove the rinsing solution from the substratesurface.

After forming the resist pattern, a pattern wiring substrate is obtainedby etching. Etching can be conducted by a publicly known method such asdry etching using plasma gas, and wet etching with an alkaline solution,a cupric chloride solution, and a ferric chloride solution or the like.

After forming the resist pattern, plating can also be conducted.Examples of the above plating method include copper plating, solderplating, nickel plating, and gold plating.

The remaining resist pattern after etching can be peeled by an organicsolvent. Examples of the above organic solvent include PGMEA (propyleneglycol monomethyl ether acetate), PGME (propylene glycol monomethylether), and EL (ethyl lactate). Examples of the above peeling methodinclude a dipping method and a spraying method. A wiring substratehaving a resist pattern formed thereon may be a multilayer wiringsubstrate, and may have a small diameter through hole.

In the present embodiment, the wiring substrate can also be formed by amethod for forming a resist pattern, then depositing a metal in vacuum,and subsequently dissolving the resist pattern in a solution, i.e., aliftoff method.

[Underlayer Film Forming Material for Lithography]

The underlayer film forming material for lithography of the presentembodiment contains the compound of the present embodiment and/or theresin of the present embodiment. The content of the compound of thepresent embodiment and/or the resin of the present embodiment in theunderlayer film forming material for lithography is preferably 1 to 100%by mass, more preferably 10 to 100% by mass, still more preferably 50 to100% by mass, particularly preferably 100% by mass, from the viewpointof coatability and quality stability.

The underlayer film forming material for lithography of the presentembodiment is applicable to a wet process and is excellent in heatresistance and etching resistance. Furthermore, the underlayer filmforming material for lithography of the present embodiment employs theabove substances and can therefore form an underlayer film that isprevented from deteriorating during high temperature baking and is alsoexcellent in etching resistance against oxygen plasma etching or thelike. Moreover, the underlayer film forming material for lithography ofthe present embodiment is also excellent in adhesiveness to a resistlayer and can therefore produce an excellent resist pattern. Theunderlayer film forming material for lithography of the presentembodiment, if required, may contain an already known underlayer filmforming material for lithography or the like, within the range notdeteriorating the effect of the present invention.

[Composition for Underlayer Film Formation for Lithography]

The composition for underlayer film formation for lithography of thepresent embodiment contains the above underlayer film forming materialfor lithography and a solvent.

[Solvent]

A publicly known solvent can be arbitrarily used as the solvent in thecomposition for underlayer film formation for lithography of the presentembodiment as long as at least the above component (A) dissolves.

Specific examples of the solvent include, but not particularly limitedto: ketone-based solvents such as acetone, methyl ethyl ketone, methylisobutyl ketone, and cyclohexanone; cellosolve-based solvents such aspropylene glycol monomethyl ether and propylene glycol monomethyl etheracetate; ester-based solvents such as ethyl lactate, methyl acetate,ethyl acetate, butyl acetate, isoamyl acetate, ethyl lactate, methylmethoxypropionate, and methyl hydroxyisobutyrate; alcohol-based solventssuch as methanol, ethanol, isopropanol, and 1-ethoxy-2-propanol; andaromatic hydrocarbons such as toluene, xylene, and anisole. Thesesolvents can be used alone as one kind or used in combination of two ormore kinds.

Among the above solvents, cyclohexanone, propylene glycol monomethylether, propylene glycol monomethyl ether acetate, ethyl lactate, methylhydroxyisobutyrate, or anisole is particularly preferable from theviewpoint of safety.

The content of the solvent is not particularly limited and is preferably100 to 10,000 parts by mass per 100 parts by mass of the aboveunderlayer film forming material, more preferably 200 to 5,000 parts bymass, and still more preferably 200 to 1,000 parts by mass, from theviewpoint of solubility and film formation.

[Crosslinking Agent]

The composition for underlayer film formation for lithography of thepresent embodiment may contain a crosslinking agent, if required, fromthe viewpoint of, for example, suppressing intermixing. Examples of thecrosslinking agent that may be used in the present embodiment include,but not particularly limited to, melamine compounds, guanaminecompounds, glycoluryl compounds, urea compounds, epoxy compounds,thioepoxy compounds, isocyanate compounds, azide compounds, andcompounds that contain a double bond such as an alkenyl ether group andhave at least one group selected from a methylol group, an alkoxymethylgroup, and an acyloxymethyl group as a substituent (crosslinkablegroup). These crosslinking agents can be used alone or in combination oftwo or more kinds. Also, these crosslinking agents may be used asadditive agents. The above crosslinkable group may be introduced as apendant group to a polymer side chain in the compound represented by theformula (1) and/or a resin containing the compound as a constituent. Acompound containing a hydroxy group can also be used as the crosslinkingagent. Specific examples of the crosslinking agent include thosedescribed in International Publication No. WO2013/024779.

In the composition for underlayer film formation for lithography of thepresent embodiment, the content of the crosslinking agent is notparticularly limited and is preferably 5 to 50 parts by mass per 100parts by mass of the underlayer film forming material, and morepreferably 10 to 40 parts by mass. By the above preferable range, amixing event with a resist layer tends to be prevented. Also, anantireflection effect is enhanced, and film formability aftercrosslinking tends to be enhanced.

[Acid Generating Agent]

The composition for underlayer film formation for lithography of thepresent embodiment may contain an acid generating agent, if required,from the viewpoint of, for example, further accelerating crosslinkingreaction by heat. An acid generating agent that generates an acid bythermal decomposition, an acid generating agent that generates an acidby light irradiation, and the like are known, any of which can be used.

Examples of the acid generating agent include those described inInternational Publication No. WO2013/024779. These acid generatingagents can be used alone or in combination of two or more kinds.

In the composition for underlayer film formation for lithography of thepresent embodiment, the content of the acid generating agent is notparticularly limited and is preferably 0.1 to 50 parts by mass per 100parts by mass of the underlayer film forming material, and morepreferably 0.5 to 40 parts by mass. By the above preferable range,crosslinking reaction tends to be enhanced by an increased amount of anacid generated. Also, a mixing event with a resist layer tends to beprevented.

[Basic Compound]

The composition for underlayer film formation for lithography of thepresent embodiment may further contain a basic compound from theviewpoint of, for example, improving storage stability.

The basic compound plays a role as a quencher against acids in order toprevent crosslinking reaction from proceeding due to a trace amount ofan acid generated by the acid generating agent. Examples of such a basiccompound include, but not particularly limited to, those described inInternational Publication No. WO2013/024779. The basic compound can beused alone or in combination of two or more kinds.

In the composition for underlayer film formation for lithography of thepresent embodiment, the content of the basic compound is notparticularly limited and is preferably 0.001 to 2 parts by mass per 100parts by mass of the underlayer film forming material, and morepreferably 0.01 to 1 parts by mass. By the above preferable range,storage stability tends to be enhanced without excessively deterioratingcrosslinking reaction.

[Further Additive Agent]

The composition for underlayer film formation for lithography of thepresent embodiment may also contain an additional resin and/or compoundfor the purpose of conferring thermosetting properties or controllingabsorbance. Examples of such an additional resin and/or compoundinclude, but not particularly limited to, naphthol resin, xylene resinnaphthol-modified resin, phenol-modified resin of naphthalene resin,polyhydroxystyrene, dicyclopentadiene resin, resins containing(meth)acrylate, dimethacrylate, trimethacrylate, tetramethacrylate, anaphthalene ring such as vinylnaphthalene or polyacenaphthylene, abiphenyl ring such as phenanthrenequinone or fluorene, or a heterocyclicring having a heteroatom such as thiophene or indene, and resinscontaining no aromatic ring; and resins or compounds containing analicyclic structure, such as rosin-based resin, cyclodextrin,adamantine(poly)ol, tricyclodecane(poly)ol, and derivatives thereof. Thecomposition for underlayer film formation for lithography of the presentembodiment may further contain a publicly known additive agent. Examplesof the above publicly known additive agent include, but not limited to,ultraviolet absorbers, surfactants, colorants, and nonionic surfactants.

[Method for Forming Underlayer Film for Lithography]

The method for forming an underlayer film for lithography according tothe present embodiment includes the step of forming an underlayer filmon a substrate using the composition for underlayer film formation forlithography of the present embodiment.

[Resist Pattern Formation Method Using Composition for Underlayer FilmFormation for Lithography]

A resist pattern formation method using the composition for underlayerfilm formation for lithography of the present embodiment has the stepsof: forming a underlayer film on a substrate using the composition forunderlayer film formation for lithography of the present embodiment(step (A-1)); forming at least one photoresist layer on the underlayerfilm (step (A-2)); and irradiating a predetermined region of thephotoresist layer with radiation for development, thereby forming aresist pattern (step (A-3)).

[Circuit Pattern Formation Method Using Composition for Underlayer FilmFormation for Lithography]

A circuit pattern formation method using the composition for underlayerfilm formation for lithography of the present embodiment has the stepsof: forming an underlayer film on a substrate using the composition forunderlayer film formation for lithography of the present embodiment(step (B-1)); forming an intermediate layer film on the underlayer filmusing a resist intermediate layer film material containing a siliconatom (step (B-2)); forming at least one photoresist layer on theintermediate layer film (step (B-3)); after the step (B-3), irradiatinga predetermined region of the photoresist layer with radiation fordevelopment, thereby forming a resist pattern (step (B-4)); after thestep (B-4), etching the intermediate layer film with the resist patternas a mask, thereby forming an intermediate layer film pattern (step(B-5)); etching the underlayer film with the obtained intermediate layerfilm pattern as an etching mask, thereby forming a underlayer filmpattern (step (B-6)); and etching the substrate with the obtainedunderlayer film pattern as an etching mask, thereby forming a pattern onthe substrate (step (B-7)).

The underlayer film for lithography of the present embodiment is notparticularly limited by its formation method as long as it is formedfrom the composition for underlayer film formation for lithography ofthe present embodiment. A publicly known approach can be appliedthereto. The underlayer film can be formed by, for example, applying thecomposition for underlayer film formation for lithography of the presentembodiment onto a substrate by a publicly known coating method orprinting method such as spin coating or screen printing, and thenremoving an organic solvent by volatilization or the like.

It is preferable to perform baking in the formation of the underlayerfilm, for preventing a mixing event with an upper layer resist whileaccelerating crosslinking reaction. In this case, the baking temperatureis not particularly limited and is preferably in the range of 80 to 450°C., and more preferably 200 to 400° C. The baking time is notparticularly limited and is preferably in the range of 10 to 300seconds. The thickness of the underlayer film can be arbitrarilyselected according to required performance and is not particularlylimited, but is usually preferably about 30 to 20,000 nm, and morepreferably 50 to 15,000 nm.

After preparing the underlayer film, it is preferable to prepare asilicon-containing resist layer or a usual single-layer resist made ofhydrocarbon thereon in the case of a two-layer process, and to prepare asilicon-containing intermediate layer thereon and further a silicon-freesingle-layer resist layer thereon in the case of a three-layer process.In this case, a publicly known photoresist material can be used forforming this resist layer.

After preparing the underlayer film on the substrate, in the case of atwo-layer process, a silicon-containing resist layer or a usualsingle-layer resist made of hydrocarbon can be prepared on theunderlayer film. In the case of a three-layer process, asilicon-containing intermediate layer can be prepared on the underlayerfilm, and a silicon-free single-layer resist layer can be furtherprepared on the silicon-containing intermediate layer. In these cases, apublicly known photoresist material can be arbitrarily selected and usedfor forming the resist layer, without particular limitations.

For the silicon-containing resist material for a two-layer process, asilicon atom-containing polymer such as a polysilsesquioxane derivativeor a vinylsilane derivative is used as a base polymer, and a positivetype photoresist material further containing an organic solvent, an acidgenerating agent, and if required, a basic compound or the like ispreferably used, from the viewpoint of oxygen gas etching resistance.Herein, a publicly known polymer that is used in this kind of resistmaterial can be used as the silicon atom-containing polymer.

A polysilsesquioxane-based intermediate layer is preferably used as thesilicon-containing intermediate layer for a three-layer process. Byimparting effects as an antireflection film to the intermediate layer,there is a tendency that reflection can be effectively suppressed. Forexample, use of a material containing a large amount of an aromaticgroup and having high substrate etching resistance as the underlayerfilm in a process for exposure at 193 nm tends to increase a k value andenhance substrate reflection. However, the intermediate layer suppressesthe reflection so that the substrate reflection can be 0.5% or less. Theintermediate layer having such an antireflection effect is not limited,and polysilsesquioxane that crosslinks by an acid or heat in which alight absorbing group having a phenyl group or a silicon-silicon bond isintroduced is preferably used for exposure at 193 nm.

Alternatively, an intermediate layer formed by chemical vapourdeposition (CVD) may be used. The intermediate layer highly effective asan antireflection film prepared by CVD is not limited, and, for example,a SiON film is known. In general, the formation of an intermediate layerby a wet process such as spin coating or screen printing is moreconvenient and more advantageous in cost, as compared with CVD. Theupper layer resist for a three-layer process may be positive type ornegative type, and the same as a single-layer resist generally used canbe used.

The underlayer film according to the present embodiment can also be usedas an antireflection film for usual single-layer resists or anunderlying material for suppression of pattern collapse. The underlayerfilm of the present embodiment is excellent in etching resistance for anunderlying process and can be expected to also function as a hard maskfor an underlying process.

In the case of forming a resist layer from the above photoresistmaterial, a wet process such as spin coating or screen printing ispreferably used, as in the case of forming the above underlayer film.After coating with the resist material by spin coating or the like,prebaking is generally performed. This prebaking is preferably performedat 80 to 180° C. in the range of 10 to 300 seconds. Then, exposure,post-exposure baking (PEB), and development can be performed accordingto a conventional method to obtain a resist pattern. The thickness ofthe resist film is not particularly limited and is generally preferably30 to 500 nm, and more preferably 50 to 400 nm.

The exposure light can be arbitrarily selected and used according to thephotoresist material to be used. General examples thereof can include ahigh energy ray having a wavelength of 300 nm or less, specifically,excimer laser of 248 nm, 193 nm, or 157 nm, soft x-ray of 3 to 20 nm,electron beam, and X-ray.

In a resist pattern formed by the above method, pattern collapse issuppressed by the underlayer film according to the present embodiment.Therefore, use of the underlayer film according to the presentembodiment can produce a finer pattern and can reduce an exposure amountnecessary for obtaining the resist pattern.

Next, etching is performed with the obtained resist pattern as a mask.Gas etching is preferably used as the etching of the underlayer film ina two-layer process. The gas etching is preferably etching using oxygengas. In addition to oxygen gas, an inert gas such as He or Ar, or CO,CO₂, NH₃, SO₂, N₂, NO₂, or H₂ gas may be added. Alternatively, the gasetching may be performed with CO, CO₂, NH₃, N₂, NO₂, or H₂ gas withoutthe use of oxygen gas. Particularly, the latter gas is preferably usedfor side wall protection in order to prevent the undercut of patternside walls.

On the other hand, gas etching is also preferably used as the etching ofthe intermediate layer in a three-layer process. The same gas etching asdescribed in the above two-layer process is applicable. Particularly, itis preferable to process the intermediate layer in a three-layer processby using chlorofluorocarbon-based gas and using the resist pattern as amask. Then, as mentioned above, for example, the underlayer film can beprocessed by oxygen gas etching with the intermediate layer pattern as amask.

Herein, in the case of forming an inorganic hard mask intermediate layerfilm as the intermediate layer, a silicon oxide film, a silicon nitridefilm, or a silicon oxynitride film (SiON film) is formed by CVD, ALD, orthe like. A method for forming the nitride film is not limited, and, forexample, a method described in Japanese Patent Laid-Open No. 2002-334869(Patent Literature 6) or WO2004/066377 (Patent Literature 7) can beused. Although a photoresist film can be formed directly on such anintermediate layer film, an organic antireflection film (BARC) may beformed on the intermediate layer film by spin coating and a photoresistfilm may be formed thereon.

A polysilsesquioxane-based intermediate layer is preferably used as theintermediate layer. By imparting effects as an antireflection film tothe resist intermediate layer film, there is a tendency that reflectioncan be effectively suppressed. A specific material for thepolysilsesquioxane-based intermediate layer is not limited, and, forexample, a material described in Japanese Patent Laid-Open No.2007-226170 (Patent Literature 8) or Japanese Patent Laid-Open No.2007-226204 (Patent Literature 9) can be used.

The subsequent etching of the substrate can also be performed by aconventional method. For example, the substrate made of SiO₂ or SiN canbe etched mainly using chlorofluorocarbon-based gas, and the substratemade of p-Si, Al, or W can be etched mainly using chlorine- orbromine-based gas. In the case of etching the substrate withchlorofluorocarbon-based gas, the silicon-containing resist of thetwo-layer resist process or the silicon-containing intermediate layer ofthe three-layer process is peeled at the same time with substrateprocessing. On the other hand, in the case of etching the substrate withchlorine- or bromine-based gas, the silicon-containing resist layer orthe silicon-containing intermediate layer is separately peeled and ingeneral, peeled by dry etching using chlorofluorocarbon-based gas aftersubstrate processing.

A feature of the underlayer film according to the present embodiment isthat it is excellent in etching resistance of these substrates. Thesubstrate can be arbitrarily selected from publicly known ones and usedand is not particularly limited. Examples thereof include Si, α-Si,p-Si, SiO₂, SiN, SiON, W, TiN, and Al. The substrate may be a laminatehaving a film to be processed (substrate to be processed) on a basematerial (support). Examples of such a film to be processed includevarious low-k films such as Si, SiO₂, SiON, SiN, p-Si, α-Si, W, W—Si,Al, Cu, and Al—Si, and stopper films thereof. A material different fromthat for the base material (support) is generally used. The thickness ofthe substrate to be processed or the film to be processed is notparticularly limited and is generally preferably about 50 to 10,000 nm,and more preferably 75 to 5,000 nm.

[Method for Purifying Compound and/or Resin]

The method for purifying the compound and/or the resin of the presentembodiment comprises the steps of: obtaining a solution (S) bydissolving the compound of the present embodiment and/or the resin ofthe present embodiment in a solvent; and extracting impurities in thecompound and/or the resin by bringing the obtained solution (S) intocontact with an acidic aqueous solution (a first extraction step),wherein the solvent used in the step of obtaining the solution (S)contains an organic solvent that does not mix with water.

In the first extraction step, the resin is preferably a resin obtainedby a reaction between the compound represented by the above formula (A)and a crosslinking compound. According to the purification method of thepresent embodiment, the contents of various metals that may be containedas impurities in the compound or the resin having a specific structuredescribed above can be reduced.

More specifically, in the purification method of the present embodiment,the compound and/or the resin is dissolved in an organic solvent thatdoes not mix with water to obtain the solution (S), and further,extraction treatment can be carried out by bringing the solution (S)into contact with an acidic aqueous solution. Thereby, metals containedin the solution (S) containing the compound and/or the resin of thepresent embodiment are transferred to the aqueous phase, then theorganic phase and the aqueous phase are separated, and thus the compoundand/or the resin of the present embodiment having a reduced metalcontent can be obtained.

The compound and/or the resin of the present embodiment used in thepurification method of the present embodiment may be alone, or may be amixture of two or more kinds. Also, the compound and/or the resin of thepresent embodiment may contain various surfactants, various crosslinkingagents, various acid generating agents, various stabilizers, and thelike.

The solvent that does not mix with water used in the present embodimentis not particularly limited, but is preferably an organic solvent thatis safely applicable to semiconductor manufacturing processes, andspecifically it is an organic solvent having a solubility in water atroom temperature of less than 30%, and more preferably is an organicsolvent having a solubility of less than 20% and particularly preferablyless than 10%. The amount of the organic solvent used is preferably 1 to100 times the mass of the compound and/or the resin of the presentembodiment to be used.

Specific examples of the solvent that does not mix with water include,but not limited to, ethers such as diethyl ether and diisopropyl ether;esters such as ethyl acetate, n-butyl acetate, and isoamyl acetate;ketones such as methyl ethyl ketone, methyl isobutyl ketone, ethylisobutyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, and2-pentanone; glycol ether acetates such as ethylene glycol monoethylether acetate, ethylene glycol monobutyl ether acetate, propylene glycolmonomethyl ether acetate (PGMEA), and propylene glycol monoethyl etheracetate; aliphatic hydrocarbons such as n-hexane and n-heptane; aromatichydrocarbons such as toluene and xylene; and halogenated hydrocarbonssuch as methylene chloride and chloroform. Among these, toluene,2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone,propylene glycol monomethyl ether acetate, ethyl acetate, and the likeare preferable, methyl isobutyl ketone, ethyl acetate, cyclohexanone,and propylene glycol monomethyl ether acetate are more preferable, andmethyl isobutyl ketone and ethyl acetate are still more preferable.Methyl isobutyl ketone, ethyl acetate, and the like have relatively highsaturation solubility for the compound and the resin of the presentembodiment and a relatively low boiling point, and it is thus possibleto reduce the load in the case of industrially distilling off thesolvent and in the step of removing the solvent by drying. Thesesolvents can be each used alone, and can be used as a mixture of two ormore kinds.

Examples of the acidic aqueous solution used in the purification methodof the present embodiment include, but not particularly limited to,aqueous mineral acid solutions in which inorganic compounds aredissolved in water, and aqueous organic acid solutions in which organiccompounds are dissolved in water. Examples of the aqueous mineral acidsolutions include, but not particularly limited to, aqueous mineral acidsolutions in which one or more types of mineral acids such ashydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid aredissolved in water. Examples of the aqueous organic acid solutionsinclude, but not particularly limited to, aqueous organic acid solutionsin which one or more types of organic acids such as acetic acid,propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid,maleic acid, tartaric acid, citric acid, methanesulfonic acid,phenolsulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acidare dissolved in water. These acidic aqueous solutions can be each usedalone, and can be also used as a combination of two or more kinds. Amongthese acidic aqueous solutions, aqueous solutions of one or more mineralacids selected from the group consisting of hydrochloric acid, sulfuricacid, nitric acid, and phosphoric acid, or aqueous solutions of one ormore organic acids selected from the group consisting of acetic acid,propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid,maleic acid, tartaric acid, citric acid, methanesulfonic acid,phenolsulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acidare preferable, aqueous solutions of sulfuric acid, nitric acid, andcarboxylic acids such as acetic acid, oxalic acid, tartaric acid, andcitric acid are more preferable, aqueous solutions of sulfuric acid,oxalic acid, tartaric acid, and citric acid are still more preferable,and an aqueous solution of oxalic acid is further preferable. It isconsidered that polyvalent carboxylic acids such as oxalic acid,tartaric acid, and citric acid coordinate with metal ions and provide achelating effect, and thus tend to be capable of more effectivelyremoving metals. As for water used herein, it is preferable to usewater, the metal content of which is small, such as ion exchanged water,according to the purpose of the purification method of the presentembodiment.

The pH of the acidic aqueous solution used in the purification method ofthe present embodiment is not particularly limited, but it is preferableto regulate the acidity of the aqueous solution in consideration of aninfluence on the compound and/or the resin of the present embodiment.Normally, the pH range is about 0 to 5, and is preferably about pH 0 to3.

The amount of the acidic aqueous solution used in the purificationmethod of the present embodiment is not particularly limited, but it ispreferable to regulate the amount from the viewpoint of reducing thenumber of extraction operations for removing metals and from theviewpoint of ensuring operability in consideration of the overall amountof fluid. From the above viewpoints, the amount of the acidic aqueoussolution used is preferably 10 to 200% by mass, more preferably 20 to100% by mass, based on 100% by mass of the solution (S).

In the purification method of the present embodiment, by bringing anacidic aqueous solution as described above into contact with thesolution (S) containing the compound and/or the resin of the presentembodiment and the solvent that does not mix with water, metals can beextracted from the compound or the resin in the solution (S).

In the purification method of the present embodiment, it is preferablethat the solution (S) further contains an organic solvent that mixeswith water. When an organic solvent that mixes with water is contained,there is a tendency that the amount of the compound and/or the resin ofthe present embodiment charged can be increased, also the fluidseparability is improved, and purification can be carried out at a highreaction vessel efficiency. The method for adding the organic solventthat mixes with water is not particularly limited. For example, any of amethod involving adding it to the organic solvent-containing solution inadvance, a method involving adding it to water or the acidic aqueoussolution in advance, and a method involving adding it after bringing theorganic solvent-containing solution into contact with water or theacidic aqueous solution. Among these, the method involving adding it tothe organic solvent-containing solution in advance is preferable interms of the workability of operations and the ease of managing theamount.

The organic solvent that mixes with water used in the purificationmethod of the present embodiment is not particularly limited, but ispreferably an organic solvent that is safely applicable to semiconductormanufacturing processes. The amount of the organic solvent used thatmixes with water is not particularly limited as long as the solutionphase and the aqueous phase separate, but is preferably 0.1 to 100times, more preferably 0.1 to 50 times, and further preferably 0.1 to 20times the mass of the compound and/or the resin of the presentembodiment.

Specific examples of the organic solvent used in the purification methodof the present embodiment that mixes with water include, but not limitedto, ethers such as tetrahydrofuran and 1,3-dioxolane; alcohols such asmethanol, ethanol, and isopropanol; ketones such as acetone andN-methylpyrrolidone; aliphatic hydrocarbons such as glycol ethers suchas ethylene glycol monoethyl ether, ethylene glycol monobutyl ether,propylene glycol monomethyl ether (PGME), and propylene glycol monoethylether. Among these, N-methylpyrrolidone, propylene glycol monomethylether, and the like are preferable, and N-methylpyrrolidone andpropylene glycol monomethyl ether are more preferable. These solventscan be each used alone, and can be used as a mixture of two or morekinds.

The temperature when extraction treatment is carried out is generally inthe range of 20 to 90° C., and preferably 30 to 80° C. The extractionoperation is carried out, for example, by thoroughly mixing the solution(S) and the acidic aqueous solution by stirring or the like and thenleaving the obtained mixed solution to stand still. Thereby, metalscontained in the solution containing the compound and/or the resin ofthe present embodiment and the organic solvents are transferred to theaqueous phase. Also, by this operation, the acidity of the solution islowered, and the degradation of the compound and/or the resin of thepresent embodiment can be suppressed.

By being left to stand still, the mixed solution is separated into anaqueous phase and a solution phase containing the compound and/or theresin of the present embodiment and the solvents, and thus the solutionphase containing the compound and/or the resin of the present embodimentand the solvents is recovered by decantation. The time for leaving themixed solution to stand still is not particularly limited, but it ispreferable to regulate the time for leaving the mixed solution to standstill from the viewpoint of attaining good separation of the solutionphase containing the solvents and the aqueous phase. Normally, the timefor leaving the mixed solution to stand still is 1 minute or longer,preferably 10 minutes or longer, and more preferably 30 minutes orlonger. While the extraction treatment may be carried out once, it iseffective to repeat mixing, leaving-to-stand-still, and separatingoperations multiple times.

It is preferable that the purification method of the present embodimentincludes the second extraction step extracting impurities in thecompound or the resin by further bringing the solution phase containingthe compound or the resin into contact with water after the firstextraction step. Specifically, for example, it is preferable that afterthe above extraction treatment is carried out using an acidic aqueoussolution, the solution phase that is extracted and recovered from theaqueous solution and that contains the compound and/or the resin of thepresent embodiment and the solvents is further subjected to extractiontreatment with water. The above extraction treatment with water is notparticularly limited, and can be carried out, for example, by thoroughlymixing the solution phase and water by stirring or the like and thenleaving the obtained mixed solution to stand still. The mixed solutionafter being left to stand still is separated into an aqueous phase and asolution phase containing the compound and/or the resin of the presentembodiment and the solvents, and thus the solution phase containing thecompound and/or the resin of the present embodiment and the solvents canbe recovered by decantation.

Water used herein is preferably water, the metal content of which issmall, such as ion exchanged water, according to the purpose of thepresent embodiment. While the extraction treatment may be carried outonce, it is effective to repeat mixing, leaving-to-stand-still, andseparating operations multiple times. The proportions of both used inthe extraction treatment and temperature, time, and other conditions arenot particularly limited, and may be the same as those of the previouscontact treatment with the acidic aqueous solution.

Water that is possibly present in the thus-obtained solution containingthe compound and/or the resin of the present embodiment and the solventscan be easily removed by performing vacuum distillation or a likeoperation. Also, if required, the concentration of the compound and/orthe resin of the present embodiment can be regulated to be anyconcentration by adding a solvent to the solution.

The method for isolating the compound and/or the resin of the presentembodiment from the obtained solution containing the compound and/or theresin of the present embodiment and the solvents is not particularlylimited, and publicly known methods can be carried out, such asreduced-pressure removal, separation by reprecipitation, and acombination thereof. Publicly known treatments such as concentrationoperation, filtration operation, centrifugation operation, and dryingoperation can be carried out if required.

EXAMPLES

The embodiment of the present invention will be more specificallydescribed with reference to examples below. However, the presentembodiment is not particularly limited to these examples.

Methods for evaluating a compound are as follows.

<Measurement of Thermal Decomposition Temperature>

EXSTAR 6000 DSC apparatus manufactured by SII NanoTechnology Inc. wasused. About 5 mg of a sample was placed in an unsealed container made ofaluminum, and the temperature was raised to 500° C. at a temperatureincrease rate of 10° C./min in a nitrogen gas stream (30 ml/min). Thetemperature at which a decrease in baseline appeared was defined as thethermal decomposition temperature.

<Molecular Weight>

The molecular weight was measured by LC-MS analysis using AcquityUPLC/MALDI-Synapt HDMS manufactured by Waters Corp.

<Synthesis Example 1> Synthesis of BisF-1

A container (internal capacity: 200 mL) equipped with a stirrer, acondenser tube, and a burette was prepared. To this container, 30 g (161mmol) of 4,4-biphenol (a reagent manufactured by Tokyo Kasei Kogyo Co.,Ltd.), 15 g (82 mmol) of 4-biphenylaldehyde (manufactured by MitsubishiGas Chemical Company Inc.), and 100 mL of butyl acetate were fed, and3.9 g (21 mmol) of p-toluenesulfonic acid (a reagent manufactured byKanto Chemical Co., Inc.) was added to prepare a reaction solution. Thereaction solution was stirred at 90° C. for 3 hours and reacted. Next,the reaction solution was concentrated. The reaction product wasprecipitated by the addition of 50 g of heptane. After cooling to roomtemperature, the precipitates were separated by filtration. The solidmatter obtained by filtration was dried and then separated and purifiedby column chromatography to obtain 5.8 g of the objective compound(BisF-1) represented by the following formula.

The following peaks were found by 400 MHz-¹H-NMR, and the compound wasconfirmed to have a chemical structure of the following formula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 9.4 (4H, O—H), 6.8-7.8 (22H, Ph-H), 6.2 (1H, C—H)

As a result of measuring the molecular weight of the obtained compoundby the above method, it was 536.

(Synthesis Example 2) Synthesis of TeF-1

A container (internal capacity: 500 mL) equipped with a stirrer, acondenser tube, and a burette was prepared. To this container, 30 g (161mmol) of 4,4-biphenol (a reagent manufactured by Tokyo Kasei Kogyo Co.,Ltd.), 8.5 g (40 mmol) of 4,4′-biphenyldicarboxyaldehyde (a reagentmanufactured by Tokyo Kasei Kogyo Co., Ltd.), and 300 g of ethyl glyme(a special grade reagent manufactured by Tokyo Kasei Kogyo Co., Ltd.)were fed, and 3.9 g (21 mmol) of p-toluenesulfonic acid (a reagentmanufactured by Kanto Chemical Co., Inc.) was added to prepare areaction solution. The reaction solution was stirred at 90° C. for 3hours and reacted. Next, the reaction solution was concentrated. Thereaction product was precipitated by the addition of 50 g of heptane.After cooling to room temperature, the precipitates were separated byfiltration. The solid matter obtained by filtration was dried and thenseparated and purified by column chromatography to obtain 4.0 g of theobjective compound (TeF-1) represented by the following formula.

The following peaks were found by 400 MHz-¹H-NMR, and the compound wasconfirmed to have a chemical structure of the following formula. ¹H-NMR:(d-DMSO, internal standard TMS) δ (ppm) 9.4 (8H, O—H), 6.8-7.8 (36H,Ph-H), 6.2 (2H, C—H)

(Synthesis Example 3) Synthesis of TeF-2

A container (internal capacity: 500 mL) equipped with a stirrer, acondenser tube, and a burette was prepared. To this container, 30 g (161mmol) of 4,4-biphenol (a reagent manufactured by Tokyo Kasei Kogyo Co.,Ltd.), 5.4 g (40 mmol) of terephthalaldehyde (a reagent manufactured byTokyo Kasei Kogyo Co., Ltd.), and 300 g of ethyl glyme (a special gradereagent manufactured by Tokyo Kasei Kogyo Co., Ltd.) were fed, and 3.9 g(21 mmol) of p-toluenesulfonic acid (a reagent manufactured by KantoChemical Co., Inc.) was added to prepare a reaction solution. Thereaction solution was stirred at 90° C. for 3 hours and reacted. Next,the reaction solution was concentrated. The reaction product wasprecipitated by the addition of 50 g of heptane. After cooling to roomtemperature, the precipitates were separated by filtration. The solidmatter obtained by filtration was dried and then separated and purifiedby column chromatography to obtain 3.2 g of the objective compound(TeF-2) represented by the following formula.

The following peaks were found by 400 MHz-¹H-NMR, and the compound wasconfirmed to have a chemical structure of the following formula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 9.4 (8H, O—H), 6.8-7.8 (32H, Ph-H), 6.2 (2H, C—H)

(Synthesis Example 4) Synthesis of BiP-1

To a container (internal capacity: 300 mL) equipped with a stirrer, acondenser tube, and a burette, after 12 g (69.0 mmol) of o-phenylphenol(a reagent manufactured by Sigma-Aldrich) was melted at 120° C., 0.27 gof sulfuric acid was added, and 2.7 g (13.8 mmol) of 4-acetylbiphenyl (areagent manufactured by Sigma-Aldrich) was added, and the contents werereacted by being stirred at 120° C. for 6 hours to obtain a reactionsolution. Next, 100 mL of N-methyl-2-pyrrolidone (manufactured by KantoChemical Co., Inc.) and 50 mL of pure water were added to the reactionsolution and then extracted by ethyl acetate. Next, the mixture wasseparated until neutral by the addition of pure water, and thenconcentrated to obtain a solution.

The obtained solution was separated by column chromatography to obtain5.0 g of the objective compound (BiP-1) represented by the followingformula (BiP-1).

As a result of measuring the molecular weight of the obtained compound(BiP-1) by the above method, it was 518. The carbon concentration was88.0% by mass, and the oxygen concentration was 6.2% by mass.

The following peaks were found by NMR measurement performed on theobtained compound (BiP-1) under the above measurement conditions, andthe compound was confirmed to have a chemical structure of the followingformula (BiP-1).

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 9.48 (2H, O—H), 6.88-7.61 (25H, Ph-H), 3.36 (3H, C—H)

(Example 1) Synthesis of BisF-1-AL4

To a container (internal capacity: 1000 mL) equipped with a stirrer, acondenser tube, and a burette, 6.7 g (12.5 mmol) of BisF-1 obtained inSynthesis Example 1, 108 g (810 mmol) of potassium carbonate, and 200 mLof dimethylformamide were fed, 185 g (1.53 mol) of allyl bromide wasadded, and the reaction solution was stirred at 110° C. for 24 hours andreacted. Next, the reaction solution was concentrated. The reactionproduct was precipitated by the addition of 500 g of pure water. Aftercooling to room temperature, the precipitates were separated byfiltration. The obtained solid matter was subjected to filtration,dried, and then separated and purified by column chromatography toobtain 4.5 g of the objective compound (BisF-1-AL4) represented by thefollowing formula.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 6.8-7.8 (23H, Ph-H), 6.2 (1H, C—H), 6.0 (4H, —CH═CH₂), 5.2-5.4(8H, —CH═CH₂), 4.4 (8H, —CH₂—)

The molecular weight of the obtained BisF-1-AL4 was 696. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 2) Synthesis of BisF-1-ME4

The same operations as in Example 1 were performed except that 160 g(1.53 mol) of methacryloyl chloride was used instead of allyl bromide,to obtain 5.0 g of BisF-1-ME4.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 6.8-7.8 (23H, Ph-H), 6.2 (1H, C—H), 5.6-6.0 (8H, —C(CH₃)═CH₂),1.9 (12H, —C(CH₃)═CH₂)

The molecular weight of the obtained BisF-1-ME4 was 808. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 3) Synthesis of BisF-1-AC4

The same operations as in Example 1 were performed except that 140 g(1.55 mol) of acryloyl chloride was used instead of allyl bromide, toobtain 5.0 g of BisF-1-AC4.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 6.8-7.8 (23H, Ph-H), 5.9-6.3 (13H, —CH═CH₂) and C—H)

The molecular weight of the obtained BisF-1-AC4 was 752. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 4) Synthesis of BisFP-1

A four necked flask (internal capacity: 1 L) equipped with a Dimrothcondenser tube, a thermometer, and a stirring blade and having adetachable bottom was prepared. To this four necked flask, 376 g (0.7mol) of the compound (BisF-1) obtained in Synthesis Example 1, 210 g(2.8 mol as formaldehyde) of 40% by mass of an aqueous formalin solution(manufactured by Mitsubishi Gas Chemical Company, Inc.), and 0.01 mL of98% by mass of sulfuric acid were added in a nitrogen stream, and themixture was reacted for 7 hours while refluxed at 100° C. at normalpressure. Subsequently, 180 g of ethyl glyme (a special grade reagentmanufactured by Tokyo Kasei Kogyo Co., Ltd.) was added as a dilutingsolvent to the reaction solution, and the mixture was left to standstill, followed by removal of an aqueous phase as a lower phase.Neutralization and washing with water were further performed, and thesolvent was distilled off under reduced pressure to obtain 354 g of alight brown solid resin (BisFP-1).

As a result of measuring the molecular weight in terms of polystyrene ofthe obtained resin(BisFP-1) by the above method, it was Mn: 1211, Mw:2167, Mw/Mn: 1.79.

(Example 5) Synthesis of BisFP-2

A four necked flask (internal capacity: 1 L) equipped with a Dimrothcondenser tube, a thermometer, and a stirring blade and having adetachable bottom was prepared. To this four necked flask, 134 g (0.25mol) of the compound (BisF-1) obtained in Synthesis Example 1, 182 g(1.0 mol) of 4-biphenylaldehyde (manufactured by Mitsubishi Gas ChemicalCompany, Inc.), and 0.5 g of p-toluenesulfonic acid were added in anitrogen stream, 180 g of ethyl glyme (a special grade reagentmanufactured by Tokyo Kasei Kogyo Co., Ltd.) was added as a solvent, andthe mixture was reacted for 7 hours at 120° C. at normal pressure.Subsequently, 180 g of ethyl glyme (a special grade reagent manufacturedby Tokyo Kasei Kogyo Co., Ltd.) was added as a diluting solvent to thereaction solution, and the mixture was left to stand still, followed byremoval of an aqueous phase as a lower phase. Neutralization and washingwith water were further performed, and the reaction solution was droppedinto 600 g of a poor solvent n-heptane (a special grade reagent of KantoChemical Co., Inc.) to precipitate a solid. The solvent was distilledoff under reduced pressure to obtain 254 g of a light brown solid resin(BisFP-2).

As a result of measuring the molecular weight in terms of polystyrene ofthe obtained resin(BisFP-2) by the above method, it was Mn: 1345, Mw:2461, Mw/Mn: 1.83.

(Example 6) Synthesis of BisFP-1-AL

To a container (internal capacity: 1000 mL) equipped with a stirrer, acondenser tube, and a burette, 6.7 g (12.5 mmol) of BisFP-1 obtained inSynthesis Example 4, 108 g (810 mmol) of potassium carbonate, and 200 mLof dimethylformamide were fed, 185 g (1.53 mol) of allyl bromide wasadded, and the reaction solution was stirred at 110° C. for 24 hours andreacted. Next, the reaction solution was concentrated. The reactionproduct was precipitated by the addition of 500 g of pure water. Aftercooling to room temperature, the precipitates were separated byfiltration. The obtained solid matter was subjected to filtration,dried, and then separated and purified by column chromatography toobtain 4.5 g of the objective compound (BisFP-1-AL).

(Example 7) Synthesis of BisFP-1-ME

The same operations as in Example 6 were performed except that 160 g(1.53 mol) of methacryloyl chloride was used instead of allyl bromide,to obtain 5.0 g of BisFP-1-ME.

(Example 8) Synthesis of BisFP-1-AC

The same operations as in Example 6 were performed except that 140 g(1.55 mol) of acryloyl chloride was used instead of allyl bromide, toobtain 5.0 g of BisFP-1-AC.

(Example 9) Synthesis of TeF-1-AL8

To a container (internal capacity: 1000 mL) equipped with a stirrer, acondenser tube, and a burette, 7.0 g (7.6 mmol) of TeF-1 obtained inSynthesis Example 2, 108 g (810 mmol) of potassium carbonate, and 200 mLof dimethylformamide were fed, 185 g (1.53 mol) of allyl bromide wasadded, and the reaction solution was stirred at 110° C. for 24 hours andreacted. Next, the reaction solution was concentrated. The reactionproduct was precipitated by the addition of 500 g of pure water. Aftercooling to room temperature, the precipitates were separated byfiltration. The obtained solid matter was subjected to filtration,dried, and then separated and purified by column chromatography toobtain 4.2 g of the objective compound (TeF-1-AL8) represented by thefollowing formula.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 6.9-7.7 (36H, Ph-H), 5.5 (2H, C—H), 6.1 (8H, —CH═CH₂), 5.3-5.4(16H, —CH═CH₂), 4.6 (16H, —CH₂—)

The molecular weight of the obtained TeF-1-AL8 was 1239. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 10) Synthesis of TeF-1-ME8

The same operations as in Example 9 were performed except that 160 g(1.53 mol) of methacryloyl chloride was used instead of allyl bromide,to obtain 4.5 g of TeF-1-ME8.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.1-7.8 (36H, Ph-H), 5.5 (2H, C—H), 6.1-6.5 (16H, —C(CH₃)═CH₂),2.0 (24H, —C(CH₃)═CH₂)

The molecular weight of the obtained TeF-1-ME8 was 1464. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 11) Synthesis of TeF-1-AC8

The same operations as in Example 9 were performed except that 140 g(1.55 mol) of acryloyl chloride was used instead of allyl bromide, toobtain 4.8 g of TeF-1-AC8.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.1-7.8 (36H, Ph-H), 5.4-6.3 (26H, —CH═CH₂) and C—H)

The molecular weight of the obtained TeF-1-AC8 was 1351. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 12) Synthesis of TeF-2-AL8

To a container (internal capacity: 1000 mL) equipped with a stirrer, acondenser tube, and a burette, 6.4 g (7.6 mmol) of TeF-2 obtained inSynthesis Example 3, 108 g (810 mmol) of potassium carbonate, and 200 mLof dimethylformamide were fed, 185 g (1.53 mol) of allyl bromide wasadded, and the reaction solution was stirred at 110° C. for 24 hours andreacted. Next, the reaction solution was concentrated. The reactionproduct was precipitated by the addition of 500 g of pure water. Aftercooling to room temperature, the precipitates were separated byfiltration. The obtained solid matter was subjected to filtration,dried, and then separated and purified by column chromatography toobtain 3.8 g of the objective compound (TeF-2-AL8) represented by thefollowing formula.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 6.9-7.7 (32H, Ph-H), 5.5 (2H, C—H), 6.1 (8H, —CH═CH₂), 5.3-5.4(16H, —CH═CH₂), 4.7 (16H, —CH₂—)

The molecular weight of the obtained TeF-2-AL8 was 1163. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 13) Synthesis of TeF-2-ME8

The same operations as in Example 12 were performed except that 160 g(1.53 mol) of methacryloyl chloride was used instead of allyl bromide,to obtain 4.0 g of TeF-2-ME8.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.1-7.8 (32H, Ph-H), 5.5 (2H, C—H), 6.1-6.5 (16H, —C(CH₃)═CH₂),2.0 (24H, —C(CH₃)═CH₂)

The molecular weight of the obtained TeF-2-ME8 was 1388. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 14) Synthesis of TeF-2-AC8

The same operations as in Example 12 were performed except that 140 g(1.55 mol) of acryloyl chloride was used instead of allyl bromide, toobtain 4.0 g of TeF-2-AC8.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.1-7.8 (32H, Ph-H), 5.4-6.3 (26H, —CH═CH₂) and C—H)

The molecular weight of the obtained TeF-2-AC8 was 1275. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 15) Synthesis of BiP-1-AL2

To a container (internal capacity: 1000 mL) equipped with a stirrer, acondenser tube, and a burette, 7.8 g (15.0 mmol) of BiP-1 obtained inSynthesis Example 4, 108 g (810 mmol) of potassium carbonate, and 200 mLof dimethylformamide were fed, 110 g (0.91 mol) of allyl bromide wasadded, and the reaction solution was stirred at 110° C. for 24 hours andreacted. Next, the reaction solution was concentrated. The reactionproduct was precipitated by the addition of 500 g of pure water. Aftercooling to room temperature, the precipitates were separated byfiltration. The obtained solid matter was subjected to filtration,dried, and then separated and purified by column chromatography toobtain 4.1 g of the objective compound (BiP-1-AL2) represented by thefollowing formula.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.0-7.8 (25H, Ph-H), 2.3 (3H, —CH₃), 6.1 (2H, —CH═CH₂), 5.3-5.4(4H, —CH═CH₂), 4.7 (4H, —CH₂—)

The molecular weight of the obtained BiP-1-AL2 was 599. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 16) Synthesis of BiP-1-ME2

The same operations as in Example 15 were performed except that 95 g(0.91 mol) of methacryloyl chloride was used instead of allyl bromide,to obtain 4.5 g of BiP-1-ME2.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.3-7.8 (25H, Ph-H), 2.3 (3H, —CH₃), 6.2-6.5 (4H, —C(CH₃)═CH₂),2.0 (6H, —C(CH₃)═CH₂)

The molecular weight of the obtained BiP-1-ME2 was 655. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

(Example 17) Synthesis of BiP-1-AC2

The same operations as in Example 15 were performed except that 110 g(0.91 mol) of acryloyl chloride was used instead of allyl bromide, toobtain 4.5 g of BiP-1-AC2.

The following peaks were found by NMR measurement performed on theobtained compound under the above measurement conditions, and thecompound was confirmed to have a chemical structure of the followingformula.

¹H-NMR: (d-DMSO, internal standard TMS)

δ (ppm) 7.3-7.8 (25H, Ph-H), 2.3 (3H, —CH₃), 5.7-6.3 (6H, —CH═CH₂)

The molecular weight of the obtained BiP-1-AC2 was 627. The thermaldecomposition temperature was 380° C., and high heat resistance was ableto be confirmed.

Comparative Example 1

A four necked flask (internal capacity: 10 L) equipped with a Dimrothcondenser tube, a thermometer, and a stirring blade and having adetachable bottom was prepared. To this four necked flask, 1.09 kg (7mol) of 1,5-dimethylnaphthalene (manufactured by Mitsubishi Gas ChemicalCompany, Inc.), 2.1 kg (28 mol as formaldehyde) of 40% by mass of anaqueous formalin solution (manufactured by Mitsubishi Gas ChemicalCompany, Inc.), and 0.97 mL of 98% by mass of sulfuric acid(manufactured by Kanto Chemical Co., Inc.) were added in a nitrogenstream, and the mixture was reacted for 7 hours while refluxed at 100°C. at normal pressure. Subsequently, 1.8 kg of ethylbenzene (specialgrade reagent manufactured by Wako Pure Chemical Industries, Ltd.) wasadded as a diluting solvent to the reaction solution, and the mixturewas left to stand still, followed by removal of an aqueous phase as alower phase. Neutralization and washing with water were furtherperformed, and ethylbenzene and unreacted 1,5-dimethylnaphthalene weredistilled off under reduced pressure to obtain 1.25 kg of a light brownsolid dimethylnaphthalene formaldehyde resin.

Subsequently, a four necked flask (internal capacity: 0.5 L) equippedwith a Dimroth condenser tube, a thermometer, and a stirring blade wasprepared. To this four necked flask, 100 g (0.51 mol) of thedimethylnaphthalene formaldehyde resin thus obtained, and 0.05 g ofp-toluenesulfonic acid were added in a nitrogen stream, and thetemperature was raised to 190° C. at which the mixture was then heatedfor 2 hours, followed by stirring. Subsequently, 52.0 g (0.36 mol) of1-naphthol was added thereto, and the temperature was further raised to220° C. at which the mixture was reacted for 2 hours. After solventdilution, neutralization and washing with water were performed, and thesolvent was removed under reduced pressure to obtain 126.1 g of ablack-brown solid modified resin (CR-1).

Examples 1 to 3, 6 to 17 and Comparative Example 1

(Heat Resistance and Resist Performance)

Results of conducting heat resistance test and resist performanceevaluation using BisF-1-AL4, BisF-1-ME4, BisF-1-AC4, BisFP-1-AL,BisFP-1-ME, BisFP-1-AC, TeF-1-AL8, TeF-1-ME8, TeF-1-AC8, TeF-2-AL8,TeF-2-ME8, TeF-2-AC8, BiP-1-AL2, BiP-1-ME2, BiP-1-AC2, and CR-1 areshown in Table 1.

(Preparation of Resist Composition)

A resist composition was prepared according to the recipe shown in Table1 using each compound synthesized as described above. Among thecomponents of the resist composition in Table 1, the following acidgenerating agent (C), acid diffusion controlling agent (E), and solventwere used.

Acid Generating Agent (C)

P-1: triphenylbenzenesulfonium trifluoromethanesulfonate (Midori KagakuCo., Ltd.) Acid diffusion controlling agent (E)

Q-1: trioctylamine (Tokyo Kasei Kogyo Co., Ltd.) Solvent

S-1: propylene glycol monomethyl ether (Tokyo Kasei Kogyo Co., Ltd.)

(Method for Testing Heat Resistance)

EXSTAR 6000 DSC apparatus manufactured by SII NanoTechnology Inc. wasused. About 5 mg of a sample was placed in an unsealed container made ofaluminum, and the temperature was raised to 500° C. at a temperatureincrease rate of 10° C./min in a nitrogen gas stream (30 ml/min). Thetemperature at which a decrease in baseline appeared was defined as thethermal decomposition temperature (Tg) The heat resistance was evaluatedaccording to the following criteria.

Evaluation A: The thermal decomposition temperature was ≥150° C.

Evaluation C: The thermal decomposition temperature was <150° C.

(Method for Evaluating Resist Performance of Resist Composition)

A clean silicon wafer was spin coated with the homogeneous resistcomposition, and then prebaked (PB) before exposure in an oven of 110°C. to form a resist film with a thickness of 60 nm. The obtained resistfilm was irradiated with electron beams of 1:1 line and space settingwith a 50 nm interval using an electron beam lithography system(ELS-7500 manufactured by ELIONIX INC.). After irradiation, the resistfilm was heated at each predetermined temperature for 90 seconds, andimmersed in 2.38% by mass TMAH alkaline developing solution for 60seconds for development. Subsequently, the resist film was washed withultrapure water for 30 seconds, and dried to form a positive type resistpattern. Concerning the formed resist pattern, the line and space wereobserved by a scanning electron microscope (S-4800 manufactured byHitachi High-Technologies Corporation) to evaluate the reactivity byelectron beam irradiation of the resist composition.

TABLE 1 Resist composition Compound Heat of synthesis Resist resistanceexample P-1 Q-1 S-1 performance Compound evaluation [g] [g] [g] [g]evaluation Example 1 BisF-1-AL4 A 1.0 0.3 0.03 50.0 Good Example 2BisF-1-ME4 A 1.0 0.3 0.03 50.0 Good Example 3 BisF-1-AC4 A 1.0 0.3 0.0350.0 Good Example 6 BisFP-1-AL A 1.0 0.3 0.03 50.0 Good Example 7BisFP-1-ME A 1.0 0.3 0.03 50.0 Good Example 8 BisFP-1-AC A 1.0 0.3 0.0350.0 Good Example 9 TeF-1-AL8 A 1.0 0.3 0.03 50.0 Good Example 10TeF-1-ME8 A 1.0 0.3 0.03 50.0 Good Example 11 TeF-1-AC8 A 1.0 0.3 0.0350.0 Good Example 12 TeF-2-AL8 A 1.0 0.3 0.03 50.0 Good Example 13TeF-2-ME8 A 1.0 0.3 0.03 50.0 Good Example 14 TeF-2-AC8 A 1.0 0.3 0.0350.0 Good Example 15 BiP-1-AL2 A 1.0 0.3 0.03 50.0 Good Example 16BiP-1-ME2 A 1.0 0.3 0.03 50.0 Good Example 17 BiP-1-AC2 A 1.0 0.3 0.0350.0 Good Comparative CR-1 C 1.0 0.3 0.03 50.0 Poor Example 1

As is evident from Table 1, it was able to be confirmed that thecompounds used in Examples 1, 2, 3, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15,16, and 17 (BisF-1-AL4, BisF-1-ME4, BisF-1-AC4, BisFP-1-AL, BisFP-1-ME,BisFP-1-AC, TeF-1-AL8, TeF-1-ME8, TeF-1-AC8, TeF-2-AL8, TeF-2-ME8,TeF-2-AC8, BiP-1-AL2, BiP-1-ME2, and BiP-1-AC2 respectively) have goodheat resistance whereas the compound (CR-1) used in Comparative Example1 is inferior in heat resistance.

In resist pattern evaluation, a good resist pattern was obtained byirradiation with electron beams of 1:1 line and space setting with a 50nm interval in Examples 1, 2, 3, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16,and 17. On the other hand, no good resist pattern was able to beobtained in Comparative Example 1.

Thus, the compound that satisfies the requirements of the presentinvention has high heat resistance and can impart a good shape to aresist pattern, as compared with the comparative compound (CR-1). Aslong as the above requirements of the present invention are met,compounds other than those described in Examples also exhibit the sameeffects.

Examples 18 to 32 and Comparative Example 2

(Preparation of Radiation-Sensitive Composition)

The components set forth in Table 2 were prepared and formed intohomogeneous solutions, and the obtained homogeneous solutions werefiltered through a Teflon® membrane filter with a pore diameter of 0.1 mto prepare radiation-sensitive compositions. Each preparedradiation-sensitive composition was evaluated as described below.

TABLE 2 Composition Component Optically active Solvent (A) [g] compound(B) [g] [g] Example 18 BisF-1-AL4 B-1 S-1 0.5 1.5 30.0 Example 19BisF-1-ME4 B-1 S-1 0.5 1.5 30.0 Example 20 BisF-1-AC4 B-1 S-1 0.5 1.530.0 Example 21 BisFP-1-AL B-1 S-1 0.5 1.5 30.0 Example 22 BisFP-1-MEB-1 S-1 0.5 1.5 30.0 Example 23 BisFP-1-AC B-1 S-1 0.5 1.5 30.0 Example24 TeF-1-AL8 B-1 S-1 0.5 1.5 30.0 Example 25 TeF-1-ME8 B-1 S-1 0.5 1.530.0 Example 26 TeF-1-AC8 B-1 S-1 0.5 1.5 30.0 Example 27 TeF-2-AL8 B-1S-1 0.5 1.5 30.0 Example 28 TeF-2-ME8 B-1 S-1 0.5 1.5 30.0 Example 29TeF-2-AC8 B-1 S-1 0.5 1.5 30.0 Example 30 BiP-1-AL2 B-1 S-1 0.5 1.5 30.0Example 31 BiP-1-ME2 B-1 S-1 0.5 1.5 30.0 Example 32 BiP-1-AC2 B-1 S-10.5 1.5 30.0 Comparative PHS-1 B-1 S-1 Example 2 0.5 1.5 30.0

The following resist base material was used in Comparative Example 2.

PHS-1: polyhydroxystyrene Mw=8000 (Sigma-Aldrich)

The following optically active compound (B) was used.

B-1: naphthoquinonediazide-based sensitizing agent of the chemicalstructural formula (G) (4NT-300, Toyo Gosei Co., Ltd.)

The following solvent was used.

S-1: propylene glycol monomethyl ether (Tokyo Kasei Kogyo Co., Ltd.)

(Evaluation of Resist Performance of Radiation-Sensitive Composition)

A clean silicon wafer was spin coated with the radiation-sensitivecomposition obtained as described above, and then prebaked (PB) beforeexposure in an oven of 110° C. to form a resist film with a thickness of200 nm. The resist film was exposed to ultraviolet using an ultravioletexposure apparatus (mask aligner MA-10 manufactured by Mikasa Co.,Ltd.). The ultraviolet lamp used was a super high pressure mercury lamp(relative intensity ratio: g-ray:h-ray:i-ray:j-ray=100:80:90:60). Afterirradiation, the resist film was heated at 110° C. for 90 seconds, andimmersed in 2.38% by mass TMAH alkaline developing solution for 60seconds for development. Subsequently, the resist film was washed withultrapure water for 30 seconds, and dried to form a 5 μm positive typeresist pattern.

The obtained line and space were observed in the formed resist patternby a scanning electron microscope (S-4800 manufactured by HitachiHigh-Technologies Corporation). As for the line edge roughness, apattern having asperities of less than 50 nm was evaluated as goodness.

In the case of using the radiation-sensitive compositions of Examples18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, and 32, a goodresist pattern with a resolution of 5 μm was able to be obtained. Theroughness of the pattern was also small and good.

On the other hand, in the case of using the radiation-sensitivecomposition of Comparative Example 2, a good resist pattern with aresolution of 5 μm was able to be obtained. However, the roughness ofthe pattern was large and poor.

As described above, it was found that a resist pattern that has smallroughness and a good shape can be formed in Examples 18, 19, 20, 21, 22,23, 24, 25, 26, 27, 28, 29, 30, 31, and 32, as compared with ComparativeExample 2. As long as the above requirements of the present inventionare met, radiation-sensitive compositions other than those described inExamples also exhibit the same effects.

Examples 33 to 47 and Comparative Example 3

(Preparation of Composition for Underlayer Film Formation forLithography)

Compositions for underlayer film formation for lithography were preparedaccording to the composition shown in Table 3. Specifically, thefollowing materials were used.

Acid generating agent: di-tertiary butyl diphenyliodoniumnonafluoromethanesulfonate (DTDPI) manufactured by Midori Kagaku Co.,Ltd.

Crosslinking agent: NIKALAC MX270 (NIKALAC) (Sanwa Chemical Co., Ltd.)

Organic solvent: propylene glycol monomethyl ether acetate (PGMEA)

Novolac: PSM4357 manufactured by Gunei Chemical Industry Co., Ltd.

(Underlayer Film Formation Conditions)

A SiO₂ substrate with a film thickness of 300 nm was coated with asolution of the underlayer film forming material for lithography of eachof Examples 33 to 47 or novolac used as a underlayer film formingmaterial, and baked at 240° C. for 60 seconds and further at 400° C. for120 seconds to form a underlayer film with a film thickness of 80 nm.

Next, etching test was conducted under conditions shown below toevaluate etching resistance. The evaluation results are shown in Table3.

[Etching Test]

Etching apparatus: RIE-10NR manufactured by Samco International, Inc.

Output: 50 W

Pressure: 20 Pa

Time: 2 min

Etching gas

Ar gas flow rate:CF₄ gas flow rate:O₂ gas flow rate=50:5:5 (sccm)

(Evaluation of Etching Resistance)

The evaluation of etching resistance was conducted by the followingprocedures. First, an underlayer film of novolac was prepared under theabove underlayer film formation conditions using novolac (PSM4357manufactured by Gunei Chemical Industry Co., Ltd.). Then, thisunderlayer film of novolac was subjected to the above etching test, andthe etching rate was measured.

Next, underlayer films of Examples 33, 34, 35, 36, 37, 38, 39, 40, 41,42, 43, 44, 45, 46, and 47 and Comparative Example 3 were prepared underthe same conditions as in the underlayer film of novolac, and subjectedto the above etching test in the same way as above, and the etching ratewas measured.

Then, the etching resistance was evaluated according to the followingevaluation criteria on the basis of the etching rate of the underlayerfilm of novolac.

[Evaluation Criteria]

A: The etching rate was less than −10% as compared with the underlayerfilm of novolac.

B: The etching rate was −10% to +5% as compared with the underlayer filmof novolac.

C: The etching rate was more than +5% as compared with the underlayerfilm of novolac.

TABLE 3 Underlayer film Acid generating forming material Solvent agentCrosslinking agent Evaluation of (part by mass) (part by mass) (part bymass) (part by mass) etching resistance Example 33 BisF-1-AL4 PGMEADTDPI NIKALAC A (10) (90) (0.5) (0.5) Example 34 BisF-1-ME4 PGMEA DTDPINIKALAC A (10) (90) (0.5) (0.5) Example 35 BisF-1-AC4 PGMEA DTDPINIKALAC A (10) (90) (0.5) (0.5) Example 36 BisFP-1-AL PGMEA DTDPINIKALAC A (10) (90) (0.5) (0.5) Example 37 BisFP-1-ME PGMEA DTDPINIKALAC A (10) (90) (0.5) (0.5) Example 38 BisFP-1-AC PGMEA DTDPINIKALAC A (10) (90) (0.5) (0.5) Example 39 TeF-1-AL8 PGMEA DTDPI NIKALACA (10) (90) (0.5) (0.5) Example 40 TeF-1-ME8 PGMEA DTDPI NIKALAC A (10)(90) (0.5) (0.5) Example 41 TeF-1-AC8 PGMEA DTDPI NIKALAC A (10) (90)(0.5) (0.5) Example 42 TeF-2-AL8 PGMEA DTDPI NIKALAC A (10) (90) (0.5)(0.5) Example 43 TeF-2-ME8 PGMEA DTDPI NIKALAC A (10) (90) (0.5) (0.5)Example 44 TeF-2-AC8 PGMEA DTDPI NIKALAC A (10) (90) (0.5) (0.5) Example45 BiP-1-AL2 PGMEA DTDPI NIKALAC A (10) (90) (0.5) (0.5) Example 46BiP-1-ME2 PGMEA DTDPI NIKALAC A (10) (90) (0.5) (0.5) Example 47BiP-1-AC2 PGMEA DTDPI NIKALAC A (10) (90) (0.5) (0.5) Comparative CR-1PGMEA DTDPI NIKALAC C Example 3 (10) (90) (0.5) (0.5)

It was found that an excellent etching rate is exerted in Examples 33,34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, and 47 as comparedwith the underlayer film of novolac.

On the other hand, it was found that an etching rate was poor inComparative Example 3 as compared with the underlayer film of novolac.

The compounds obtained in Examples 1, 2, 3, 6, 7, 8, 9, 10, 11, 12, 13,14, 15, 16, and 17 have a relatively low molecular weight and a lowviscosity, and all of their glass transition temperatures are as low as100° C. or lower. Therefore, the embedding properties of underlayer filmforming materials for lithography containing these compounds can berelatively advantageously enhanced. Furthermore, all of their thermaldecomposition temperatures are 150° C. or higher (evaluation A), andhigh heat resistance is retained because of their rigid structures afterelimination of acid dissociation groups. Therefore, the materials can beused even under high temperature baking conditions.

Example 48

Next, a SiO₂ substrate with a film thickness of 300 nm was coated withthe composition for underlayer film formation for lithography of Example33, and baked at 240° C. for 60 seconds and further at 400° C. for 120seconds to form an underlayer film with a film thickness of 85 nm. Thisunderlayer film was coated with a resist solution for ArF and baked at130° C. for 60 seconds to form a photoresist layer with a film thicknessof 140 nm.

The ArF resist solution used was prepared by containing 5 parts by massof a compound of the formula (C) given below, 1 part by mass oftriphenylsulfonium nonafluoromethanesulfonate, 2 parts by mass oftributylamine, and 92 parts by mass of PGMEA.

The compound of the formula (C) was prepared as follows. 4.15 g of2-methyl-2-methacryloyloxyadamantane, 3.00 g ofmethacryloyloxy-γ-butyrolactone, 2.08 g of 3-hydroxy-1-adamantylmethacrylate, and 0.38 g of azobisisobutyronitrile were dissolved in 80mL of tetrahydrofuran to prepare a reaction solution. This reactionsolution was polymerized for 22 hours with the reaction temperature keptat 63° C. in a nitrogen atmosphere. Then, the reaction solution wasadded dropwise into 400 mL of n-hexane. The product resin thus obtainedwas solidified and purified, and the resulting white powder was filteredand dried overnight at 40° C. under reduced pressure to obtain acompound represented by the following formula.

wherein 40, 40, and 20 represent the ratio of each constituent unit anddo not represent a block copolymer.

Subsequently, the photoresist layer was exposed using an electron beamlithography system (manufactured by ELIONIX INC.; ELS-7500, 50 keV),baked (PEB) at 115° C. for 90 seconds, and developed for 60 seconds in2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution toobtain a positive type resist pattern.

Comparative Example 4

The same operations as in Example 48 were performed except that nounderlayer film was formed so that a photoresist layer was formeddirectly on a SiO₂ substrate to obtain a positive type resist pattern.

[Evaluation]

Concerning each of Example 48 and Comparative Example 4, the shapes ofthe obtained 45 nm L/S (1:1) and 80 nm L/S (1:1) resist patterns wereobserved under an electron microscope manufactured by Hitachi, Ltd.(S-4800). The shapes of the resist patterns after development wereevaluated as goodness when having good rectangularity without patterncollapse, and as poorness if this was not the case. The smallest linewidth having good rectangularity without pattern collapse as a result ofthis observation was used as an index for resolution evaluation. Thesmallest electron beam energy quantity capable of lithographing goodpattern shapes was used as an index for sensitivity evaluation. Theresults are shown in Table 4.

TABLE 4 Underlayer Resist pattern film forming Resolution Sensitivityshape after material (nmL/S) (μC/cm²) development Example 48 Asdescribed 47 12 Good in Example 1 Comparative None 81 25 Poor Example 4

As is evident from Table 4, the underlayer film of Example 48 wasconfirmed to be significantly superior in both resolution andsensitivity to Comparative Example 4. Also, the resist pattern shapesafter development were confirmed to have good rectangularity withoutpattern collapse. The difference in the resist pattern shapes afterdevelopment indicated that the underlayer film forming material forlithography of Example 48 has good adhesiveness to a resist material.

Example 49

A SiO₂ substrate with a film thickness of 300 nm was coated with thecomposition for underlayer film formation for lithography used inExample 33, and baked at 240° C. for 60 seconds and further at 400° C.for 120 seconds to form an underlayer film with a film thickness of 90nm. This underlayer film was coated with a silicon-containingintermediate layer material and baked at 200° C. for 60 seconds to forman intermediate layer film with a film thickness of 35 nm. Thisintermediate layer film was further coated with the above resistsolution for ArF and baked at 130° C. for 60 seconds to form aphotoresist layer with a film thickness of 150 nm. Thesilicon-containing intermediate layer material used was the siliconatom-containing polymer described in <Synthesis Example 1> of JapanesePatent Laid-Open No. 2007-226170.

Subsequently, the photoresist layer was mask exposed using an electronbeam lithography system (manufactured by ELIONIX INC.; ELS-7500, 50keV), baked (PEB) at 115° C. for 90 seconds, and developed for 60seconds in 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueoussolution to obtain a 45 nm L/S (1:1) positive type resist pattern.

Then, the silicon-containing intermediate layer film (SOG) was dryetched with the obtained resist pattern as a mask using RIE-10NRmanufactured by Samco International, Inc. Subsequently, dry etching ofthe underlayer film with the obtained silicon-containing intermediatelayer film pattern as a mask and dry etching of the SiO₂ film with theobtained underlayer film pattern as a mask were performed in order.

Respective etching conditions are as shown below.

Conditions for etching of resist intermediate layer film with resistpattern

Output: 50 W

Pressure: 20 Pa

Time: 1 min

Etching gas

Ar gas flow rate:CF₄ gas flow rate:O₂ gas flow rate=50:8:2 (sccm)

Conditions for etching of resist underlayer film with resistintermediate film pattern

Output: 50 W

Pressure: 20 Pa

Time: 2 min

Etching gas

Ar gas flow rate:CF₄ gas flow rate:O₂ gas flow rate=50:5:5 (sccm)

Conditions for etching of SiO₂ film with resist underlayer film pattern

Output: 50 W

Pressure: 20 Pa

Time: 2 min

Etching gas

Ar gas flow rate:CsF₁₂ gas flow rate:C₂F₆ gas flow rate:O₂ gas flowrate=50:4:3:1 (sccm)

[Evaluation]

The pattern cross section (the shape of the SiO₂ film after etching) ofExample 49 obtained as described above was observed under an electronmicroscope manufactured by Hitachi, Ltd. (S-4800). As a result, it wasconfirmed that the shape of the SiO₂ film after etching in a multilayerresist process is a rectangular shape in Examples using the underlayerfilm of the present invention and is good without defects.

The present application is based on Japanese Patent Application No.2015-145642 filed on Jul. 23, 2015 with the Japan Patent Office, thecontents of which are incorporated herein by reference.

INDUSTRIAL APPLICABILITY

The present invention has industrial applicability as a compound thatcan be used in photoresist components, resin raw materials for materialsfor electric or electronic components, raw materials for curable resinssuch as photocurable resins, resin raw materials for structuralmaterials, or resin curing agents, etc.

1. A compound represented by the following formula (1):

wherein R¹ is a 2n-valent group having 1 to 60 carbon atoms; R² to R⁵are each independently a linear, branched, or cyclic alkyl group having1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, analkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1 to30 carbon atoms and optionally having a substituent, a halogen atom, anitro group, an amino group, a carboxylic acid group, a group in which ahydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a group selected from the group consisting of groups representedby the following formula (A), a thiol group, or a hydroxy group, whereinat least one of the R² to the R⁵ is a group selected from a grouprepresented by the formula (A); m² and m³ are each independently aninteger of 0 to 8; m⁴ and m⁵ are each independently an integer of 0 to9, provided that m², m³, m⁴, and m⁵ are not 0 at the same time; n is aninteger of 1 to 4; and p² to p⁵ are each independently an integer of 0to 2:


2. The compound according to claim 1, wherein R¹ is a 2n-valent grouphaving 1 to 30 carbon atoms, R² to R⁵ are each independently a linear,branched, or cyclic alkyl group having 1 to 10 carbon atoms, an arylgroup having 6 to 10 carbon atoms, an alkenyl group having 2 to 10carbon atoms, a group selected from the group consisting of groupsrepresented by the above formula (A), a thiol group, or a hydroxy group,wherein at least one of the R² to the R⁵ is a group selected from thegroup consisting of groups represented by the above formula (A), m² andm³ are each independently an integer of 0 to 8, m⁴ and m⁵ are eachindependently an integer of 0 to 9, provided that m², m³, m⁴, and m⁵ arenot 0 at the same time, n is an integer of 1 to 4, and p² to p⁵ are eachindependently an integer of 0 to 2, in the above formula (1).
 3. Thecompound according to claim 1, wherein at least one of the R⁴ and the R⁵is a group selected from the group consisting of groups represented bythe above formula (A).
 4. The compound according to claim 1, wherein atleast one of the R² and the R³ is a group selected from the groupconsisting of groups represented by the above formula (A).
 5. Thecompound according to claim 1, wherein the compound represented by theabove formula (1) is a compound represented by the following formula(1a):

wherein R¹ to R⁵ and n are as same as the groups in the above formula(1); m^(2′) and m^(3′) are each independently an integer of 0 to 4; andm^(4′) and m^(5′) are each independently an integer of 0 to 5, providedthat m^(2′), m³′, m^(4′), and m^(5′) are not 0 at the same time.
 6. Thecompound according to claim 5, wherein the compound represented by theabove formula (1a) is a compound represented by the following formula(1b):

wherein R¹ and n are as same as the groups in the above formula (1); R⁶and R⁷ are each independently a linear, branched, or cyclic alkyl grouphaving 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms,an alkenyl group having 2 to 10 carbon atoms, a group selected from thegroup consisting of groups represented by the above formula (A), a thiolgroup, or a hydroxy group; R⁸ to R¹¹ are each independently a groupselected from the group consisting of groups represented by the aboveformula (A) or a hydroxy group, provided that at least one of the R⁸ tothe R¹¹ is a group selected from the group consisting of groupsrepresented by the above formula (A); and m⁶ and m⁷ are eachindependently an integer of 0 to
 7. 7. The compound according to claim6, wherein the compound represented by the above formula (1b) is acompound selected from the group consisting of compounds represented bythe following formula (1c):

wherein each R¹² is independently a group selected from the groupconsisting of groups represented by the above formula (A) or a hydroxygroup, provided that at least one R¹² is a group selected from the groupconsisting of groups represented by the above formula (A).
 8. A resincomprising a constituent unit derived from the compound according toclaim
 1. 9. A method for producing the compound according to claim 1,comprising a step of reacting a compound represented by the followingformula (2) with an allyl group introducing agent or a (meth)acryloylgroup introducing agent in the presence of a basic catalyst:

wherein R¹ is a 2n-valent group having 1 to 60 carbon atoms; R^(2′) toR^(5′) are each independently a linear, branched, or cyclic alkyl grouphaving 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms,an alkenyl group having 2 to 30 carbon atoms, an alkoxy group having 1to 30 carbon atoms and optionally having a substituent, a halogen atom,a nitro group, an amino group, a carboxylic acid group, a group in whicha hydrogen atom of a hydroxy group is replaced with a vinylphenylmethylgroup, a thiol group, or a hydroxy group, wherein at least one of theR^(2′) to the R^(5′) is a hydroxy group; m² and m³ are eachindependently an integer of 0 to 8; m⁴ and m⁵ are each independently aninteger of 0 to 9, provided that m², m³, m⁴, and m⁵ are not 0 at thesame time; n is an integer of 1 to 4; and p² to p⁵ are eachindependently an integer of 0 to
 2. 10. A composition comprising: one ormore selected from the group consisting of the compound according toclaim 1; and a resin comprising a constituent unit derived from thecompound.
 11. A composition for forming optical component comprising:one or more selected from the group consisting of the compound accordingto claim 1; and a resin comprising a constituent unit derived from thecompound.
 12. A film forming composition for lithography comprising: oneor more selected from the group consisting of the compound according toclaim 1; and a resin comprising a constituent unit derived from thecompound.
 13. A resist composition comprising: one or more selected fromthe group consisting of the compound according to claim 1; and a resincomprising a constituent unit derived from the compound.
 14. The resistcomposition according to claim 13, further comprising a solvent.
 15. Theresist composition according to claim 13, further comprising an acidgenerating agent.
 16. The resist composition according to claim 13,further comprising an acid diffusion controlling agent.
 17. A method forforming a resist pattern, comprising: a step of forming a resist film ona substrate using the resist composition according to claim 13; a stepof exposing at least a portion of the formed resist film; and a step ofdeveloping the exposed resist film, thereby forming a resist pattern.18. A radiation-sensitive composition comprising: a component (A) whichis one or more selected from the group consisting of the compoundaccording to claim 1; and a resin comprising a constituent unit derivedfrom the compound; an optically active diazonaphthoquinone compound (B);and a solvent, wherein a content of the solvent is 20 to 99% by massbased on 100% by mass in total of the radiation-sensitive composition,and a content of components except for the solvent is 1 to 80% by massbased on 100% by mass in total of the radiation-sensitive composition.19. The radiation-sensitive composition according to claim 18, wherein acontent ratio among the compound and/or the resin (A), the opticallyactive diazonaphthoquinone compound (B), and a further optionalcomponent (D) optionally contained in the radiation-sensitivecomposition ((A)/(B)/(D)) is (1 to 99% by mass)/(99 to 1% by mass)/(0 to98% by mass), based on 100% by mass of solid components of theradiation-sensitive composition.
 20. The radiation-sensitive compositionaccording to claim 18, wherein the radiation-sensitive composition iscapable of forming an amorphous film by a spin coating.
 21. A method forproducing an amorphous film, comprising a step of forming an amorphousfilm on a substrate using the radiation-sensitive composition accordingto claim
 18. 22. A method for forming a resist pattern, comprising: astep of forming a resist film on a substrate using theradiation-sensitive composition according to claim 18; a step ofexposing at least a portion of the formed resist film; and a step ofdeveloping the exposed resist film, thereby forming a resist pattern.23. A composition for underlayer film formation for lithographycomprising: one or more selected from the group consisting of thecompound according to claim 1; and a resin comprising a constituent unitderived from the compound, and a solvent.
 24. The composition forunderlayer film formation for lithography according to claim 23, furthercomprising a crosslinking agent.
 25. A method for forming a underlayerfilm for lithography, comprising a step of forming a underlayer film ona substrate using the composition for underlayer film formation forlithography according to claim
 23. 26. A method for forming a resistpattern, comprising: a step of forming a underlayer film on a substrateusing the composition for underlayer film formation for lithographyaccording to claim 23; a step of forming at least one photoresist layeron the underlayer film; and a step of irradiating a predetermined regionof the photoresist layer with radiation for development, thereby forminga resist pattern.
 27. A method for forming a circuit pattern,comprising: a step of forming a underlayer film on a substrate using thecomposition for underlayer film formation for lithography according toclaim 23; a step of forming an intermediate layer film on the underlayerfilm using a resist intermediate layer film material containing asilicon atom; a step of forming at least one photoresist layer on theintermediate layer film; a step of irradiating a predetermined region ofthe photoresist layer with radiation for development, thereby forming aresist pattern; a step of etching the intermediate layer film with theresist pattern as a mask, thereby forming an intermediate layer filmpattern; a step of etching the underlayer film with the intermediatelayer film pattern as an etching mask, thereby forming a underlayer filmpattern; and a step of etching the substrate with the underlayer filmpattern as an etching mask, thereby forming a pattern on the substrate.28. A purification method comprising: a step of obtaining a solution (S)by dissolving one or more selected from the group consisting of thecompound according to claim 1 and a resin comprising a constituent unitderived from the compound in a solvent; and a step of extractingimpurities in the compound and/or the resin by bringing the obtainedsolution (S) into contact with an acidic aqueous solution (a firstextraction step), wherein the solvent used in the step of obtaining thesolution (S) comprises a solvent that does not mix with water.
 29. Thepurification method according to claim 28, wherein the acidic aqueoussolution is an aqueous mineral acid solution or an aqueous organic acidsolution; the aqueous mineral acid solution is an aqueous mineral acidsolution in which one or more selected from the group consisting ofhydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid isdissolved in water; and the aqueous organic acid solution is an aqueousorganic acid solution in which one or more selected from the groupconsisting of acetic acid, propionic acid, oxalic acid, malonic acid,succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid,methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid, andtrifluoroacetic acid is dissolved in water.
 30. The purification methodaccording to claim 28, wherein the solvent that does not mix with wateris one or more solvents selected from the group consisting of toluene,2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone,propylene glycol monomethyl ether acetate, and ethyl acetate.
 31. Thepurification method according to claim 28, comprising the step ofextracting impurities in the compound and/or the resin by furtherbringing a solution phase comprising the compound and/or the resin intocontact with water after the first extraction step (a second extractionstep).